Arrange the below mentioned III-V materials to produce LEDs in order of their increasing emission wavelengths : (a) In AS (b) Si C (c) Ga P (d) Ga AS Codes :
(b) (c) (d) (a)
To arrange the given III-V materials in order of their increasing emission wavelengths for producing LEDs, we need to consider the bandgap energies of these materials. The emission wavelength is inversely proportional to the bandgap energy. Mathematically, this relationship is given by:
\(\lambda = \frac{hc}{E_g}\)
where \(\lambda\) is the emission wavelength, \(h\) is Planck's constant, \(c\) is the speed of light, and \(E_g\) is the bandgap energy.
Materials with larger bandgap energies emit light at shorter wavelengths (higher energy), and materials with smaller bandgap energies emit light at longer wavelengths (lower energy).
Let's examine the bandgap energies for the materials in question:
Now, we arrange them in order of increasing emission wavelengths, which is equivalent to decreasing bandgap energy:
Therefore, the correct arrangement in order of increasing emission wavelengths is:
Correct Answer: (b) (c) (d) (a)
This order implies that SiC has the shortest wavelength emission, followed by GaP, then GaAs, and finally InAs with the longest wavelength emission.
Match the following :
| List – I | List – II |
| a. LASER | i. Emits monochromatic light of low intensity |
| b. Solar cell | ii. Consumes electrical power due to tHe incident light |
| c. Photo diode | iii. Delivers power to load |
| d. LED | iv. Emits monochromatic light of high intensity |
Codes :
Which one of the following is not LED material ?
1. Ga As
2. Ga P
3. Si
4. SiO2
When atoms in Direct bandgap semiconductors move from higher energy state (E2) to lower energy state (E1) and emission of light takes place, the energy of emitted photon is given as
Match the following :
| List – I | List – II |
| a. LED | i. Heavily doped |
| b. Avalanche Photodiode | ii. Coherent radiation |
| c. Tunnel diode | iii. Spontaneous emission |
| d. LASER | iv. Current gain |
Codes :
Match List I with List II
| LIST I | LIST II | ||
|---|---|---|---|
| A. | LED | I. | Photo resistive effect |
| B. | LCD | II. | Photo conductive effect |
| C. | LDR | III. | dynamic scattering of light |
| D. | Photo Diode | IV. | electro - luminescence |
Choose the correct answer from the options given below:
Match the following lists :
| List - I | List - II |
a) ![]() | i) Solar cell |
b) ![]() | ii) Pn-photodiode |
c) ![]() | iii) Pin photodiode |
d) ![]() | iv) Light emitting diode |
Choose the correct answer from the codes given below:
Which of the following statements are correct in case of Light Emitting Diodes ?
(a) Homojunctions LEDs are often surface emitters.
(b) Heterojunctions LEDs are Edge emitters.
(c) Heterojunction LEDs are often surface emitters.
(d) LEDs provide monochromatic & coherent radiations.
Options :
The material LiNbO3 is used in the manufacturing of the following device :
Light emitting diodes fabricated from Ga, As emit radiations in the :
Which computer application scans texts and converts into readable form in computer?
Light wave propagation is possible in optical fibre due to a phenomenon called:
An LCD requires a power of __________.