In a MOSFET the drain saturation current is
\(\dfrac{\mu_n C_{ox} W}{2L}(V_{gs}-V_{th})^{2}\)
The question is asking about the expression for drain saturation current in a MOSFET. Let's analyze the given options and find out the correct formula.
The drain saturation current for a MOSFET in the saturation region is given by the well-known formula:
\(I_{D(sat)} = \dfrac{\mu_n C_{ox} W}{2L}(V_{gs}-V_{th})^{2}\)
where:
- \(\mu_n\) is the electron mobility.
- \(C_{ox}\) is the oxide capacitance per unit area.
- \(W\) is the width of the MOSFET channel.
- \(L\) is the length of the MOSFET channel.
- \(V_{gs}\) is the gate-source voltage.
- \(V_{th}\) is the threshold voltage.
This formula is valid for the saturation region, where the transistor operates with maximum current flow for a given gate-source voltage.
The options provided are:
- \(\dfrac{\mu_n C_{ox} W}{L}(V_{gs}-V_{th})\)
- \(\dfrac{\mu_n C_{ox} W}{2L}(V_{gs}-V_{th})^{2}\)
- \(\dfrac{\mu_n C_{ox} W}{2L}(V_{gs}-V_{th})v_{ds}\)
- \(\dfrac{\mu_n C_{ox} L}{W}(V_{gs}-V_{th})^{2}\)
Upon comparing these options with the known formula for drain saturation current, we see that the correct option is:
Option 2: \(\dfrac{\mu_n C_{ox} W}{2L}(V_{gs}-V_{th})^{2}\)
This matches the standard expression for the drain saturation current in a MOSFET operating in the saturation region.
Therefore, the correct answer is:
\(\dfrac{\mu_n C_{ox} W}{2L}(V_{gs}-V_{th})^{2}\)
Similar Questions
The threshold voltage of an n-channel MOSFET can be increased by
Assertion (A) : MOS ICs based on MOSFET structure find wide applications in digital field.
Reason (R) : MOS ICs have small size and are easy to fabricate.
In MOSFET, the carrier velocity between constant mobility regime and the saturation velocity can be described as :
If Z × L is the total channel area and C'par is the total input parasitic capacitance, then for microwave performance the cut off frequency can be defined as :
(A) \(\dfrac{g_{m}}{2\pi\left(C'_{ca}+C'_{par}\right)}\)
(B) \(\dfrac{g_{m}}{2\pi C_{gs}}\)
(C) \(\dfrac{g_{m}}{2\pi C_{gd}}\)
(D) \(\dfrac{g_{m}}{2\pi\left(ZLC_{ox}+C'_{par}\right)}\)Choose the most appropriate answer from the options given below :
Consider the following statements :
(A) The origin of the punch through phenomena is the lowering of the barrier near the source.
(B) For a long channel device, a drain bias can change the effective channel length, but the barrier at the source end remains constant.
(C) For a short channel device, this barrier is no longer fixed.
(D) The lowering of the source barrier do not cause any injection of extra carriers.
(E) The punch through condition normally occurs inside the bulk region of the semiconductor.Choose the most appropriate answer from the options given below :
In MOSFET, the linear region current is :
(A) \(\dfrac{\mu_{n}C_{ox}w}{L}\left(V_{gs}-V_{th}-\dfrac{V_{ds}}{2}\right)V_{ds}\)
(B) \(\dfrac{\mu_{n}C_{ox}w}{L}\left(V_{gs}-V_{th}\right)V_{ds}\)
(C) \(\dfrac{\mu_{n}C_{ox}w}{2L}\left(V_{gs}-V_{th}\right)V_{ds}^{2}\)
(D) \(\dfrac{\mu_{n}C_{ox}w}{L}\left(V_{gs}-V_{th}\right)^{2}\)Choose the most appropriate answer from the options given below :
Approximate oxide capacitance value (Cgd) for saturation operating mode of MOS transistor is:
For an n-channel MOS transistor with $\mu_n$ = 600 cm2/Vs, Cox = 7 x 10-8 F/cm2, W = 40 $\mu_m$, L = 4$\mu_m$ and VTO=1.0 V, the value of K parameter is:
In MOS
A. The substrate fermi potential ϕF is negative in NMOS
B. The substrate fermi potential ϕF is positive in NMOS
C. The substrate bias voltage VSB is positive in NMOS, negative in PMOS
D. The substrate bias voltage VSB is negative in NMOS, positive in PMOS.
Choose the correct answer from the options given below:
In enhancement mode MOSFET the saturation (drain) current is given by
(a) \(K\dfrac{W}{L}(V_{gs}-V_{th})^{2}\)
(b) \(K\dfrac{W}{L}(V_{gs}-V_{th})(1+\lambda V_{ds})\)
(c) \(K\dfrac{W}{L}(V_{gs}-V_{th})^{2}(1+\lambda V_{ds})\)
(d) \(K\dfrac{W}{L}(V_{gs}-V_{th})^{2}(1-\lambda V_{ds})\)
Out of these
Important Questions from MOSFET
The O in a MOSFET stands for _______ layer which provides _______ to the device.
Which industry does aluminium smelting belong to?
In an N-channel MOSFET, the drain current ID increases as _______.
Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 µm and width 100 µm. The product of electron mobility (µn) and oxide capacitance per unit area (COX) is µn COX = 1 mA/V2 . The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS = [2 − sin (2t)] V and drain-to-source voltage VDS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current is ________.
Given, Vgs is the gate-source voltage, Vds is the drain source voltage, and Vth is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are
