In a MOSFET the drain saturation current is
\(\dfrac{\mu_n C_{ox} W}{2L}(V_{gs}-V_{th})^{2}\)
The question is asking about the expression for drain saturation current in a MOSFET. Let's analyze the given options and find out the correct formula.
The drain saturation current for a MOSFET in the saturation region is given by the well-known formula:
\(I_{D(sat)} = \dfrac{\mu_n C_{ox} W}{2L}(V_{gs}-V_{th})^{2}\)
where:
- \(\mu_n\) is the electron mobility.
- \(C_{ox}\) is the oxide capacitance per unit area.
- \(W\) is the width of the MOSFET channel.
- \(L\) is the length of the MOSFET channel.
- \(V_{gs}\) is the gate-source voltage.
- \(V_{th}\) is the threshold voltage.
This formula is valid for the saturation region, where the transistor operates with maximum current flow for a given gate-source voltage.
The options provided are:
- \(\dfrac{\mu_n C_{ox} W}{L}(V_{gs}-V_{th})\)
- \(\dfrac{\mu_n C_{ox} W}{2L}(V_{gs}-V_{th})^{2}\)
- \(\dfrac{\mu_n C_{ox} W}{2L}(V_{gs}-V_{th})v_{ds}\)
- \(\dfrac{\mu_n C_{ox} L}{W}(V_{gs}-V_{th})^{2}\)
Upon comparing these options with the known formula for drain saturation current, we see that the correct option is:
Option 2: \(\dfrac{\mu_n C_{ox} W}{2L}(V_{gs}-V_{th})^{2}\)
This matches the standard expression for the drain saturation current in a MOSFET operating in the saturation region.
Therefore, the correct answer is:
\(\dfrac{\mu_n C_{ox} W}{2L}(V_{gs}-V_{th})^{2}\)
Similar Questions
In enhancement mode MOSFET the saturation (drain) current is given by
(a) \(K\dfrac{W}{L}(V_{gs}-V_{th})^{2}\)
(b) \(K\dfrac{W}{L}(V_{gs}-V_{th})(1+\lambda V_{ds})\)
(c) \(K\dfrac{W}{L}(V_{gs}-V_{th})^{2}(1+\lambda V_{ds})\)
(d) \(K\dfrac{W}{L}(V_{gs}-V_{th})^{2}(1-\lambda V_{ds})\)
Out of these
For an n-channel MOS transistor with $\mu_n$ = 600 cm2/Vs, Cox = 7 x 10-8 F/cm2, W = 40 $\mu_m$, L = 4$\mu_m$ and VTO=1.0 V, the value of K parameter is:
Approximate oxide capacitance value (Cgd) for saturation operating mode of MOS transistor is:
In MOS
A. The substrate fermi potential ϕF is negative in NMOS
B. The substrate fermi potential ϕF is positive in NMOS
C. The substrate bias voltage VSB is positive in NMOS, negative in PMOS
D. The substrate bias voltage VSB is negative in NMOS, positive in PMOS.
Choose the correct answer from the options given below:
The threshold voltage of a MOSFET can be lowered by
1. using a thinner gate oxide
2. reducing the carrier concentration in the substrate
3. increasing the carrier concentration in the substrateOf these statements :
The threshold voltage of an n-channel MOSFET can be increased by
The threshold voltage of an n-channel MOSFET can be increased by
Assertion (A) : MOS ICs based on MOSFET structure find wide applications in digital field.
Reason (R) : MOS ICs have small size and are easy to fabricate.
In MOSFET, the carrier velocity between constant mobility regime and the saturation velocity can be described as :
In MOSFET, the linear region current is :
(A) \(\dfrac{\mu_{n}C_{ox}w}{L}\left(V_{gs}-V_{th}-\dfrac{V_{ds}}{2}\right)V_{ds}\)
(B) \(\dfrac{\mu_{n}C_{ox}w}{L}\left(V_{gs}-V_{th}\right)V_{ds}\)
(C) \(\dfrac{\mu_{n}C_{ox}w}{2L}\left(V_{gs}-V_{th}\right)V_{ds}^{2}\)
(D) \(\dfrac{\mu_{n}C_{ox}w}{L}\left(V_{gs}-V_{th}\right)^{2}\)Choose the most appropriate answer from the options given below :
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