Under forward-bias conditions, what is the primary mechanism that creates forward current across a PN junction?
Majority carriers crossing the junction to become injected minority carriers that diffuse through the neutral regions
Under forward bias:
- The external voltage reduces the built-in barrier potential.
- Majority carriers overcome the reduced barrier and cross the junction: electrons from n-side enter p-side (become minority carriers in p); holes from p-side enter n-side (become minority carriers in n).
- These injected minority carriers diffuse away from the junction through the neutral regions, recombining as they go.
- This injection and diffusion constitutes the forward (diffusion) current.
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Important Questions from PN Junction
In a semiconductor diode, the cut-in voltage is the voltage:
The leakage current in a pn junction is of the order of:
Diode junction breakdowns above 5 V are caused by:
The width of the depletion layer in a P-N junction diode
ln a p-n junction diode the forward current
