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Question

The existence of cut-in voltage in a diode is mainly due to the presence of __________.

This question was previously asked in
RRB JE 2025 CBT 2 Mechanical and Allied Engg Question Paper English (2-Jul-2026) (Shift-1)
The correct answer is

Depletion barrier potential

A p-n junction diode does not start conducting the moment even a tiny forward voltage is applied. Instead, current remains negligible until the applied forward voltage reaches a certain minimum value, after which current rises sharply. This minimum forward voltage is called the cut-in voltage (also known as the threshold voltage, knee voltage, or offset voltage) — approximately 0.2–0.3 V for germanium diodes and approximately 0.6–0.7 V for silicon diodes.

Why does this threshold exist? When a p-type and n-type semiconductor are joined, majority charge carriers diffuse across the junction (electrons from the n-side, holes from the p-side) until an equilibrium is reached. This diffusion leaves behind fixed, immobile ions on either side of the junction — positive ions on the n-side and negative ions on the p-side — creating a narrow region depleted of free charge carriers, called the depletion region. These fixed ionic charges set up an internal electric field directed from the n-side to the p-side, which corresponds to a built-in (barrier) potential, V₀, that opposes further diffusion of majority carriers across the junction.

  • When forward bias is applied, the external voltage opposes this built-in barrier potential.
  • As long as the applied forward voltage is smaller than the barrier potential, only a very small current flows (mainly due to minority carriers), because most carriers are still prevented from crossing the depletion region.
  • Once the forward voltage becomes large enough to substantially neutralise/overcome the barrier potential, the depletion region narrows drastically, majority carriers can diffuse across freely, and the current increases sharply — this onset voltage is the cut-in voltage.

Thus, the cut-in voltage is a direct consequence of the depletion region's built-in barrier potential, which must be overcome before appreciable conduction can begin.

The remaining options do not explain this phenomenon: a diode certainly does not have infinite conductivity (if anything, it behaves almost like an open circuit below cut-in and like a low-resistance path above it); the atoms in the depletion region are not simply “neutral atoms without charge” — they are ionised donor and acceptor atoms that create the barrier field precisely because they carry fixed charge; and no external magnetic field is involved at all in the operation of a basic p-n junction diode — its behaviour is governed entirely by electric fields and carrier diffusion/drift within the semiconductor.

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Similar Questions

  1. At room temperature, the region in a PN junction diode where there are no mobile electrons or holes is called __________________.

  2. Under forward-bias conditions, what is the primary mechanism that creates forward current across a PN junction?

  3. Before breakdown, increasing reverse voltage causes reverse saturation current to __________.

  4. What is the main disadvantage of a half-wave rectifier?

  5. Consider an abrupt p-n junction under thermal equilibrium. If the acceptor doping concentration (NA) in the p-region is made significantly larger than the donor doping concentration (ND) in the n-region (i.e., $N_A ≫ N_D$), how is the depletion region physically distributed?


Important Questions from PN Junction

  1. In a p-n junction diode

    1. In reverse bias mode the bulk resistance is dominant.
    2. The junction impedance is variable.

  2. In a MOS transistor, if n+ region is diffused in p-type substrate, the type of pn junction generated towards channel and drain is:

  3. Match the following lists :

     

    List – I List – II
    a.Abrupt p-n junctioni.
    p+n+
    b.Linearly graded p-n junctionii.
    p+nn+
    c.Tunnel diodeiii.
    p π(ν)  n
    d.p-i-n diodeiv.
    p+pnn+

    Correct codes are :

  4. Consider the following statements for a p-n junction diode :

    (a) It is an active component
    (b) Depletion layer width decreases with forward biasing
    (c) In the reverse bias case, saturation current increases with increasing temperature

    Which of the statements given above are correct ?

  5. At room temperature, the region in a PN junction diode where there are no mobile electrons or holes is called __________________.

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