The existence of cut-in voltage in a diode is mainly due to the presence of __________.
Depletion barrier potential
A p-n junction diode does not start conducting the moment even a tiny forward voltage is applied. Instead, current remains negligible until the applied forward voltage reaches a certain minimum value, after which current rises sharply. This minimum forward voltage is called the cut-in voltage (also known as the threshold voltage, knee voltage, or offset voltage) — approximately 0.2–0.3 V for germanium diodes and approximately 0.6–0.7 V for silicon diodes.
Why does this threshold exist? When a p-type and n-type semiconductor are joined, majority charge carriers diffuse across the junction (electrons from the n-side, holes from the p-side) until an equilibrium is reached. This diffusion leaves behind fixed, immobile ions on either side of the junction — positive ions on the n-side and negative ions on the p-side — creating a narrow region depleted of free charge carriers, called the depletion region. These fixed ionic charges set up an internal electric field directed from the n-side to the p-side, which corresponds to a built-in (barrier) potential, V₀, that opposes further diffusion of majority carriers across the junction.
Thus, the cut-in voltage is a direct consequence of the depletion region's built-in barrier potential, which must be overcome before appreciable conduction can begin.
The remaining options do not explain this phenomenon: a diode certainly does not have infinite conductivity (if anything, it behaves almost like an open circuit below cut-in and like a low-resistance path above it); the atoms in the depletion region are not simply “neutral atoms without charge” — they are ionised donor and acceptor atoms that create the barrier field precisely because they carry fixed charge; and no external magnetic field is involved at all in the operation of a basic p-n junction diode — its behaviour is governed entirely by electric fields and carrier diffusion/drift within the semiconductor.
Before breakdown, increasing reverse voltage causes reverse saturation current to __________.
What is the main disadvantage of a half-wave rectifier?
Consider an abrupt p-n junction under thermal equilibrium. If the acceptor doping concentration (NA) in the p-region is made significantly larger than the donor doping concentration (ND) in the n-region (i.e., $N_A ≫ N_D$), how is the depletion region physically distributed?
At room temperature, the region in a PN junction diode where there are no mobile electrons or holes is called __________________.
Under forward-bias conditions, what is the primary mechanism that creates forward current across a PN junction?
Diode junction breakdowns above 5 V are caused by:
The leakage current in a pn junction is of the order of:
For a PN junction, we have
A. Width of depletion layer
B. Junction barrier voltage
C. Reverse leakage current
Which of the above parameters will decrease when the temperature of the junction rises?
The depletion region consists of:
In the P-N junction, the barrier voltage