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Question

Arrange the following in ascending order based on their diffusivity :

(A) Boron
(B) Arsenic
(C) Antimony
(D) Phosphorus

Choose the most appropriate answer from the options given below :

This question was previously asked in
UGC NET 2023 Electronic Science Question Paper (13-Dec-2023) (Shift 1)
The correct answer is

(C), (A), (D), (B)

 The official ordering is antimony, boron, phosphorus, arsenic — option 2 — and antimony's place at the head of it is the part that is beyond dispute.

Why diffusivity differs between dopants at all. A dopant atom moves through silicon by one of two mechanisms, and which one dominates decides how fast it goes:

MechanismHow the atom movesSpeed
VacancyWaits for a neighbouring lattice site to fall empty, then hops into itSlow
Interstitial / interstitialcyMoves through the gaps between lattice atomsFast

Diffusivity is also strongly temperature dependent, following an Arrhenius law:

\(D=D_{0}e^{-E_{a}/kT}\)

so a difference of a few tenths of an electron-volt in activation energy produces orders of magnitude in D. This is why diffusion furnaces are held to a degree or two.

Antimony is the slowest of the four, and both plausible orderings agree on it. It is a large, heavy atom that moves almost entirely by the vacancy mechanism, so it requires an empty neighbouring site before it can move at all. That slowness is turned to advantage: antimony is used for buried layers beneath an epitaxial layer, precisely because it stays where it is put while the epitaxy and all the later high-temperature steps are performed above it.

A note on the rest of the ordering. Commonly tabulated values place arsenic below boron and phosphorus rather than above them — arsenic, like antimony, is a large atom moving largely by vacancies, and it is chosen for shallow source and drain junctions for exactly that reason. On those figures the ascending order would be antimony, arsenic, boron, phosphorus, which is not among the options. The printed key's order is followed here, and antimony's leading position — the feature both readings share — is what distinguishes options 1 and 2 from the other two in any case.

Why boron and phosphorus are the fast pair. Both are comparatively small atoms with a large interstitial component to their motion, which is why they are the standard choices where a deep junction is wanted — boron for p-type wells, phosphorus for n-type wells and for gettering.

Hence, the answer is (C), (A), (D), (B).

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Similar Questions

  1. When silicon dioxide of thickness d is grown, the Silicon consumed is :

  2. Match List - I with List - II.

    List - IList - II  
    (A) Annealing(I) Isolation
    (B) Sealing(II) Doping
    (C) Ion implantation(III) Packing density
    (D) Oxidation(IV) Crystal restoration

    Choose the correct answer from the options given below :

  3. A thin layer of dopant is deposited onto silicon surface with a fixed total amount of dopants QT per unit area. If D is the diffusivity of dopants, then the surface concentration is :

  4. The idea of using diffusion techniques was disclosed in patent by Pfann in the year :

  5. Fick's second law of diffusion in one dimensional form can be expressed as :

  6. The diffusivity determined experimentally over a range of diffusion temperatures can be expressed as :

  7. For a diffused layer that forms a p-n junction an average sheet resistance RS is defined and related to junction depth xj, the carrier mobility μ, and impurity distribution C(x) as :

  8. Match the following :

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Important Questions from Semiconductor Process Flow

  1. A. For impurity diffusion in semiconductor, concentration gradient is the only essential requirement. 

    B. Annealing is a mandatory step after ion-implantation. 

    C. Wet etching is normally anisotropic 

    D. High temperature is required for the growth of $SiO_2$ because oxidation reaction takes place at high temperature 

    E. Bird's beak formation is a characteristic of LOCOS isolation 

    Choose the correct answer from the options given below:

  2. Arrange the given process steps in sequence for self-aligned gate formation. 

    A. Thermal oxidation to grow gate oxide. 

    B. Polysilicon deposition 

    C. Photolithography using gate mask 

    D. Etching of polysilicon and oxide 

    E. Source/drain diffusion 

    Choose the correct answer from the options given below:

  3. Match the LIST-I with LIST-II
    LIST-ILIST-II
    A. Shallow trench isolation (STI)I. Low static power dissipation
    B. Junction isolationII. High static power dissipation
    C. CMOS technologyIII. High component density
    D. Bipolar IC technologyIV. Low component density
    Choose the correct answer from the options given below:
  4. Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R 

    Assertion A: Impurity diffusion in semiconductor essentially needs very high temperature. 

    Reason R: Diffusivity of impurity atoms is negligibly small at room temperature. 

    In the light of the above statements, choose the most appropriate answer from the options given below

  5. In particle beam lithography, the resolution depends upon :
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