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Question

Which of the following statements are true for optical photoresists
A. Solubility of a photo-resist changes on exposure to light in developer solution.
B. Solubility of a photo-resist does not change on exposure to light in developer solution.
C. A negative photo-resist on exposure to light becomes less soluble in developer solution.
D. A positive photo-resist on exposure to light becomes more soluble in developer solution.
Choose the correct answer from the options given below:

The correct answer is
A, C and D only

Understanding Optical Photoresists

Optical photoresists are light-sensitive materials crucial in processes like photolithography, used extensively in manufacturing integrated circuits and microelectronic devices. Their primary function relies on a change in their chemical properties, specifically their solubility, when exposed to light of a specific wavelength.

How Photoresists Work

Photoresists are typically dissolved in a specific solvent called a developer solution. The key principle is that this solubility changes after the photoresist is exposed to light through a patterned mask.

  • Exposure: Light (usually UV) shines through a mask onto the photoresist layer.
  • Chemical Change: The exposed parts of the photoresist undergo a chemical transformation.
  • Development: The wafer is immersed in a developer solution. Depending on the type of photoresist, either the exposed or unexposed areas dissolve away.

Analyzing the Statements

Statement A: Solubility Changes on Exposure

This statement is the fundamental principle behind all photoresists. Whether it's a positive or negative resist, exposure to light causes a chemical reaction that alters its solubility in the developer solution. Therefore, Statement A is true.

Statement B: Solubility Does Not Change

This statement directly contradicts the basic mechanism of how photoresists function. If solubility did not change, the developer solution would either remove all the resist or none of it, making the patterning process impossible. Therefore, Statement B is false.

Statement C: Negative Photoresist Behavior

A negative photoresist works by undergoing cross-linking or polymerization when exposed to light. This process makes the exposed regions chemically tougher and less soluble in the developer solution. The developer then washes away the unexposed, more soluble regions. Therefore, Statement C is true.

Statement D: Positive Photoresist Behavior

A positive photoresist works in the opposite way. When exposed to light, the chemical bonds within the resist molecules break down (often via a photochemical reaction involving a sensitizer like a PAC -%;">dissolution inhibitor), making the exposed regions more soluble in the developer solution. The developer washes away these exposed areas, leaving the unexposed pattern behind. Therefore, Statement D is true.

Conclusion

Based on the analysis:

  • Statement A is true (solubility always changes).
  • Statement B is false (solubility must change).
  • Statement C is true (negative resist becomes less soluble).
  • Statement D is true (positive resist becomes more soluble).

The correct combination of true statements includes A, C, and D.

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Important Questions from Semiconductor Process Flow

  1. Which one of the following processes is preferred to form the gate dielectric (SiO2) of MOSFETs?

  2. Arrange the following in the correct sequence of steps for MOS fabrication
    A. Wafer formation
    B. Photolithography
    C. Oxidation
    D. Gate and source/drain formation
    E. Metallization
    Choose the correct answer from the options given below:

  3. In particle beam lithography, the resolution depends upon :
  4. A. For impurity diffusion in semiconductor, concentration gradient is the only essential requirement. 

    B. Annealing is a mandatory step after ion-implantation. 

    C. Wet etching is normally anisotropic 

    D. High temperature is required for the growth of $SiO_2$ because oxidation reaction takes place at high temperature 

    E. Bird's beak formation is a characteristic of LOCOS isolation 

    Choose the correct answer from the options given below:

  5. Arrange the given process steps in sequence for self-aligned gate formation. 

    A. Thermal oxidation to grow gate oxide. 

    B. Polysilicon deposition 

    C. Photolithography using gate mask 

    D. Etching of polysilicon and oxide 

    E. Source/drain diffusion 

    Choose the correct answer from the options given below:

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