Which dielectric layer is used as gate material in fabrication of MOSFET ?
Silicon dioxide
In a MOSFET, the gate electrode is separated from the channel by a thin insulating (dielectric) film. Charge on the gate induces an inversion layer in the silicon underneath through this film, so its quality decides threshold voltage, leakage and reliability.
In standard silicon fabrication this film is grown by thermal oxidation of the silicon wafer itself (dry or wet oxidation), producing SiO2. It forms an almost defect-free Si–SiO2 interface with very low density of interface states, a high breakdown field (about 10 MV/cm) and a band gap near 9 eV.
Aluminium oxide is a high-k material used only in some advanced stacks, silicon nitride is mainly used as a masking/passivation layer (LOCOS mask, final passivation) because of its poor interface with silicon, and silicon is the semiconductor substrate, not a dielectric.
That is why the classical gate dielectric of the MOS structure (the “O” in Metal–Oxide–Semiconductor) is silicon dioxide.
Hence, the answer is Silicon dioxide.
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Important Questions from Mixed Topic (MH-SET)
.................... is a client server application that identifies each host on the internet with a unique user-friendly name.
Every OS has a ................ or .......... which primarily resides in the main memory of the computer to perform some of the basic functions of the OS.
(i) Kernel
(ii) Interface
(iii) Nucleus
(iv) Compiler
Codes:
Which of the following are referred to as low level language?
(i) Machine language
(ii) Assembly language
(iii) High level language
(iv) Natural language
Codes:
Match the following:
List I List II (a) New York Public Library (i) Shelv AR (b) Miami University Augmented Research Group (ii) Smart library (c) Oula University Library (iii) Wolf Walk (d) North Carolina State University (iv) Find the future Codes:
Which part of the QR code represents the encoded data?
