All Exams Test series for 1 year @ ₹349 only
Question

The process of extension of a single-crystal surface by growing a film in such a way that the added atoms form a continuation of the single-crystal structure is called :

This question was previously asked in
CUET PG 2026 Agri-Business Management Question Paper (25-Mar-2026) (Shift 2)
The correct answer is
Epitaxy

Epitaxy: Crystal Structure Extension Explained

The process described is known as Epitaxy. It involves growing a thin crystalline film on a crystalline substrate. The key feature is that the crystal structure of the deposited film follows the same crystallographic orientation as the substrate, effectively acting as a continuation of the substrate's crystal lattice.

Analyzing the Options

  • Epitaxy: This definition precisely matches the question, describing the growth of a film that continues the underlying single-crystal structure.
  • Ion Implantation: This technique involves embedding ions into a material, altering its composition and properties, rather than growing a crystalline layer.
  • Chemical Vapor Deposition (CVD): While CVD can be used to perform epitaxy, it is a broader technique for depositing thin films. The question specifically asks for the name of the *process* of structure continuation, which is epitaxy itself.
  • Electroplating: This method uses electrochemical processes to deposit a metal coating, typically resulting in polycrystalline or amorphous structures, not a direct crystalline continuation of a substrate.

Therefore, epitaxy is the specific term for extending a single-crystal structure by growing a film layer.

Was this answer helpful?

Similar Questions

  1. Calculate the output voltage of an op-amp for input voltages of $V_{i1} = 150 \mu\text{V}$ and $V_{i2} = 140 \mu\text{V}$. The amplifier has a differential gain of $A_d = 4000$ and the value of CMRR is $100$ :
  2. For an op-amp having a slew rate of $4\text{ V}/\mu\text{s}$, what is the maximum closed-loop voltage gain that can be used when input signal varies by $0.1\text{V}$ in $10\mu\text{s}$ ?
  3. For the series diode configuration of the given figure, determine $V_D$ and $I_D$.

  4. For the given emitter-bias network, determine the values of $I_C$ and $V_{CE}$. Assume $\beta = 100$.

  5. Given below are two statements : one is labelled as Assertion (A) and the other is labelled as Reason (R).
    Assertion (A) : The gate of a MOSFET is insulated from body of FET by deposition of a very thin fragile layer of $\text{SiO}_2$ over the substrate.
    Reason (R) : The device is therefore called an insulated gate field-effect transistor (IGFET).
    In the light of the above statements, choose the most appropriate answer from the options given below :
  6. Given below are two statements : one is labelled as Assertion (A) and the other is labelled as Reason (R).
    Assertion (A) : The body effect in MOSFET causes the threshold voltage $V_{\text{th}}$ to increase as source-body voltage $V_{\text{SB}}$ increases.
    Reason (R) : Increasing $V_{\text{SB}}$ raises the surface potential and therefore reduces the barrier for inversion.
    In the light of the above statements, choose the most appropriate answer from the options given below :
  7. Sequence for standard n-well fabrication process is :
    A. Passivation
    B. n-well implant
    C. Metallization
    D. Source/drain diffusion
    Choose the correct answer from the options given below :
  8. What is the typical efficiency of half-wave rectifier:
  9. The sequence of physical events when forward bias is applied to PN junction:
    A. Barrier potential reduces
    B. Majority carriers injected across junction
    C. Recombination in neutral regions increases
    D. Diffusion current established across quasi-neutral regions
    E. Net forward current increases
    Choose the correct answer from the options given below :
  10. In an op-amp which of the following parameters depend on frequency.
    A. Voltage gain
    B. Noise current
    C. CMRR
    D. Output voltage swing
    E. Gain bandwidth product
    Choose the correct answer from the options given below :

Important Questions from Miscellaneous

  1. Which of the following scheduler/schedulers is/are also called CPU scheduler ?
    (A). Short Term Scheduler
    (B). Long Term Scheduler
    (C). Medium Term Scheduler
    (D). Asymmetric Scheduler
    Choose the correct answer from the options given below:
  2. A situation where two or more processes are blocked, waiting for resources held by each other is called:
  3. External fragmentation occurs ________.
  4. Which disk scheduling algorithm looks for the track closest to the current head position?
  5. Which CPU scheduling algorithm prefers the process with the shortest burst time?
Need Expert Advice?
Upcoming Exams
AIIMS Recruitment
August 31, 2026
GATE
February 06, 2027
Test Series
CUET PG img
CUET
CUET PG Psychology (HUQP20) 2026 Mock Test Series
10 Tests
763 Attempts
3.7(15)
English

Start Your Preparation with Prepp Mobile App

Download the app from Google Play & App Store
Download the app from Google Play & App Store
Prepp Mobile App