The process described is known as Epitaxy. It involves growing a thin crystalline film on a crystalline substrate. The key feature is that the crystal structure of the deposited film follows the same crystallographic orientation as the substrate, effectively acting as a continuation of the substrate's crystal lattice.
Therefore, epitaxy is the specific term for extending a single-crystal structure by growing a film layer.
| List - I (Addressing Modes) | List - II (Instruction) |
| A. Immediate Addressing | I. LDAX B |
| B. Register Addressing | II. OUT 01H |
| C. Direct Addressing | III. MVI B, 37H |
| D. Indirect Addressing | IV. MOV A, B |
| List - I | List - II |
| (Memory) | (Characteristic) |
| A. ROM | I. Volatile, Fast, Expensive |
| B. EPROM | II. UV erasable |
| C. EEPROM | III. Electrically erasable |
| D. SRAM | IV. Non-Volatile, permanent data |
| List - I | List - II |
| (Bus/Logic) | (Function/Characteristic) |
| A. Address bus | I. Carries read/write signals, timing signals, and interrupt signals |
| B. Data bus | II. A three-state output that can be high, low, or high-impedance |
| C. Control bus | III. Unidirectional lines used by CPU to point to a memory location or I/O device |
| D. Tristate logic | IV. Bidirectional lines used for transferring data between the CPU and memory |