For the series diode configuration of the given figure, determine $V_D$ and $I_D$.
To determine the diode voltage \(V_D\) and the current \(I_D\) for the given series diode configuration, we follow these steps:
Step 1: Understanding the Circuit Configuration
The circuit consists of a silicon diode and a resistor in series. The voltage across the circuit is given as \(+0.4 \, \text{V}\), and the resistor value is \(1.3 \, \text{k}\Omega\).
Step 2: Analyzing the Diode's Behavior
For a silicon diode, the forward voltage drop is typically about \(0.7 \, \text{V}\) when it is conducting. However, in this circuit, the supply voltage is only \(0.4 \, \text{V}\) which is less than the typical forward voltage drop of a silicon diode (\(0.7 \, \text{V}\)).
Step 3: Determining the Diode Voltage \(V_D\)
Since the supply voltage is insufficient to forward-bias the diode (i.e., it does not reach the typical \(0.7 \, \text{V}\) required), the diode remains in the non-conducting state. Thus:
\(V_D = 0.4 \, \text{V}\).
Step 4: Calculating the Current \(I_D\)
Because the diode is not conducting (in the off state), the current \(I_D\) is \(0 \, \text{A}\). Therefore:
\(I_D = 0 \, \text{A}\).
Step 5: Conclusion
Based on the above analysis, the correct values for \(V_D\) and \(I_D\) are \(0.4 \, \text{V}\) and \(0 \, \text{A}\) respectively. Therefore, the correct answer is: 0.4 V and 0 A.
For the given emitter-bias network, determine the values of $I_C$ and $V_{CE}$. Assume $\beta = 100$.
| List-I | List-II |
| Electronic Configuration | First Ionisation energy (kJ mol$^{-1}$) |
| (A). ns$^2$ | (I). 2100 |
| (B). ns$^2$np$^1$ | (II). 1400 |
| (C). ns$^2$np$^3$ | (III). 800 |
| (D). ns$^2$np$^6$ | (IV). 900 |
| List-I | List-II |
| Spectroscopy | Property |
| (A). Raman | (I). Polarizability |
| (B). FTIR | (II). Dipole Moment |
| (C). UV-Visible | (III). Absorbance |
| (D). NMR | (IV). Spin |