P-side of a semiconductor diode is applied a potential of 0.5 V whereas the N-side is applied a potential of –1.0 V. The diode shall :
Conduct
A PN junction diode is forward biased when its P-side (anode) is at a higher potential than its N-side (cathode). Forward bias reduces the barrier potential, and once the applied forward voltage exceeds the cut-in voltage (about 0.7 V for silicon, 0.3 V for germanium) a large forward flow of carriers starts.
Here the P-side is at +0.5 V and the N-side is at −1.0 V. The voltage across the diode, anode with respect to cathode, is \(V_D = V_P - V_N = 0.5 - (-1.0) = 1.5\,\text{V}\). The diode is forward biased by 1.5 V, which is well above the cut-in voltage of either silicon or germanium, so the diode conducts.
It would not conduct only if the N-side were more positive than the P-side (reverse bias) or if the forward voltage were below cut-in. Partial conduction describes the small region just around the cut-in voltage, not a 1.5 V forward bias. Breakdown happens only under a large reverse bias, which is not the case here.
Conduct option is correct.
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