A PNP transistor is fabricated with an increased base doping concentration while keeping all other physical dimensions and doping levels constant. What is the effect on the transistor's performance?
The common-emitter current gain decreases
To understand the effect of increasing the base doping concentration on the performance of a PNP transistor, let's break down the relevant concepts:
Understanding PNP Transistor Operation
A PNP transistor consists of three layers: Emitter (P-type), Base (N-type), and Collector (P-type). The transistor's operation relies on the movement of holes and electrons between these layers.
Key Parameters:
- Emitter Injection Efficiency (\(\gamma\)): Represents the fraction of charge carriers injected from the emitter that contribute to the collector current.
- Base Transport Factor (\(\beta_T\)): Represents the fraction of injected carriers that make it through the base to contribute to the collector current.
- Common-emitter current gain (\(\beta\)): Defined as the ratio of the collector current (\(I_C\)) to the base current (\(I_B\)), \(\beta = \frac{I_C}{I_B}\).
Effect of Increased Base Doping Concentration
Increasing the base doping concentration impacts the following aspects:
- Emitter Injection Efficiency (\(\gamma\)): This efficiency generally decreases as the base doping increases. The higher concentration of doping increases the likelihood of recombination in the base, thereby reducing the fraction of charge carriers reaching the collector from the emitter.
- Base Transport Factor (\(\beta_T\)): Typically, this factor decreases too because a greater base doping leads to higher recombination rates in the base region, reducing the number of carriers that can traverse the base.
-
Common-emitter current gain (\(\beta\)): Since \(\beta\) is the product of the emitter injection efficiency and the base transport factor, increasing base doping leads to a decrease in \(\beta\).
\beta = \gamma \times \beta_T
- Collector Current Independence: The collector current is directly influenced by the emitter current. Thus, it does not become independent of the emitter current.
Conclusion
Based on the analysis, the effect of increased base doping concentration is that the common-emitter current gain decreases. This aligns with the correct answer provided in the options.
Similar Questions
A PNP transistor is operating in active region. If the emitter voltage decreases such that the emitter becomes less positive than the base while the biasing condition of the collector-base junction remains unchanged, the transistor will enter _______.
In a properly biased PNP transistor operating in active region, the emitter terminal is _______.
Important Questions from Bipolar Junction Transistor
Find $I_C$, $V_{BE}$=0.7V.
- Voltage gain of common emitter amplifier with $R_E$ is given as :
Match the following :
List – I (Biasing of BJT) List – II (Functions) a. E-B junction forward bias and C-B junction reverse bias i. Very low gain amplifier b. Both E-B and C-B junctions forward bias ii. Saturation condition c. E-B junction reverse bias and C-B junction forward bias iii. High gain amplifier d. Both E-B and C-B junctions reverse bias iv. Cut-off condition Codes :
The doping concentration of n-p-n transistor are
i. 5 × 1018 / cm3
ii. 1017 / cm3
iii. 2 × 107 / cm3Identify the regions in the above order i, ii and iii.
For the BJT to be biased in its linear or active operating region :
(a) the base-emitter Junction must be forward biased
(b) the base-collector Junction must be reverse biased
(c) the base-emitter Junction must be reverse biased
(d) the base-collector Junction must be forward biased
