What happens if a voltage of about 0.7 V is applied across the base and emitter of the NPN transistor?
A small current will flow between the two terminals
An NPN transistor has three terminals: Collector (C), Base (B), and Emitter (E). The junction between the Base and the Emitter is essentially a P-N junction (Base is P-type, Emitter is N-type in an NPN transistor, or vice versa depending on the doping layers, but the junction behavior is like a diode). Like any diode, this base-emitter junction requires a certain minimum forward voltage to conduct a significant current.
For silicon transistors, which are very common, this minimum forward voltage, often called the cut-in voltage or turn-on voltage, is typically around \(0.7 \, \text{V}\). When the voltage applied across the base and emitter terminals (\(V_{BE}\)) is less than this value, the junction is either reverse-biased or forward-biased but with very little voltage, so only a negligible leakage current flows.
When a voltage of about \(0.7 \, \text{V}\) is applied across the base (positive with respect to emitter for NPN), this forward biases the base-emitter junction. This voltage is the typical threshold required to overcome the potential barrier of the silicon P-N junction.
Therefore, applying approximately \(0.7 \, \text{V}\) across the base and emitter of an NPN transistor forward biases the junction and causes a small, but significant, current to flow between these two terminals. This base current is crucial because it controls the larger current flow from the collector to the emitter.
Based on the behavior of the base-emitter P-N junction in a silicon NPN transistor, applying approximately \(0.7 \, \text{V}\) causes a current to flow.
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