All Exams Test series for 1 year @ ₹349 only
Question

Given below are two statements :

Statement I : Concentration of acceptor atoms in the region between isolation islands in a monolythic integrated circuit will be much higher then in a p-type substrate.

Statement II : The higher density is provided to prevent the depletion region of the reverse biased isolation to substrate junction from extending into the p+ type material.

In the light of the above statements, choose the most appropriate answer from the options given below :

This question was previously asked in
UGC NET 2023 Electronic Science Question Paper (13-Dec-2023) (Shift 1)
The correct answer is

Both Statement I and Statement II are correct

To determine the accuracy of the given statements, we need to analyze each one related to monolithic integrated circuits and isolation techniques:

  1. Statement I: Concentration of acceptor atoms in the region between isolation islands in a monolithic integrated circuit will be much higher than in a p-type substrate.
    • Monolithic integrated circuits employ isolation techniques where the devices must be electrically isolated from each other. This isolation is often achieved by creating a p-n junction through diffusion processes.
    • The regions between these isolation islands usually have a high concentration of acceptor atoms (p+ type) compared to the p-type substrate to maintain effective electrical isolation by limiting the spread of the depletion region.
    Thus, Statement I is correct.
  2. Statement II: The higher density is provided to prevent the depletion region of the reverse biased isolation to substrate junction from extending into the p+ type material.
    • In a reverse-biased p-n junction, the depletion region forms at the junction interface. A higher acceptor concentration near these isolation regions helps ensure that the depletion region does not extend significantly into the p+ region, which could otherwise affect the isolation needed by allowing charge carriers to flow.
    • Therefore, the higher doping in these regions serves exactly this purpose of controlling the depletion region, enhancing the isolation efficiency.
    Thus, Statement II is also correct.

Thus, comparing both statements with the theoretical underpinnings of isolation in CMOS and similar technologies confirms that:

Correct Answer: Both Statement I and Statement II are correct.

Was this answer helpful?

Similar Questions

  1. The evaporation rate from a clean surface is related to the equilibrium vapour pressure Pe of the evaporating species of molecular weight M by an expression :

  2. Czochralski (Cz) method is used instead of using float zone technique to grow Si crystal because it produces :

  3. Czochralski system of crystal growth is a

  4. The thermal oxidation of silicon single crystal producer stacking faults lying on the plane.

  5. The desired properties of metallization for integrated circuits are

    A. low resistivity.

    B. low conductivity.

    C. easy to etch for pattern generation.

    D. tough to etch for pattern generation.

    E. no contamination with device or wafers.

    Choose the correct answer from the options given below :

  6. The major processing steps of BJT IC fabrication in VLSI technology are

    A. Oxidation

    B. Diffusion

    C. Crystal growth

    D. Photolithography

    E. Epitaxial layer formation

    Choose the correct ascending order from the options given below :

  7. MEMS devices are within the size range of

  8. Arrange the following fabrication steps in order needed to fabricate the IC :

    (a) Oxidation   (b) Etching    (c) Metallization        (d) Epitaxial growth

    Codes :

  9. Assertion (A) : In a bipolar IC fabrication, the diode isolation is used to isolate one device from the other.

    Reason (R) : P+n diode used as isolation diode in IC fabrication.

    Select your answer using the codes given below.

  10. Assertion (A) : The epitaxial layer growth possesses the same crystal structure to that of the substrate on which it is grown.

    Reason (R) : It can only be of similar conductivity type but possesses different value of resistivity to that of the substrate.

    Select your answer using the codes given below.


Important Questions from Device Technology

  1. In the process of fabricating monolithic integrated circuits:
  2. Maximum component density for a given PCB size can be obtained by

  3. In MOSFET fabrication, the channel length is defined during the process of

  4. The desired property of gate and interconnection metallization is

  5. In a silicon oxidation model, \(\rm \frac{B}{A}\) is the linear rate constant and τ accounts for the shift in the time coordinate to account for the presence of the initial oxide layer, then the linear law is represented as:

Need Expert Advice?
Upcoming Exams
MH SET
October 25, 2026
CTET
December 12, 2026
Test Series
UGC NET img
Teaching
UGC NET (Paper 1) 2026 Mock Test Series
476 Tests 1 Tests Free
4.3(72)
English, Hindi

Start Your Preparation with Prepp Mobile App

Download the app from Google Play & App Store
Download the app from Google Play & App Store
Prepp Mobile App