Given below are two statements : Statement I : Concentration of acceptor atoms in the region between isolation islands in a monolythic integrated circuit will be much higher then in a p-type substrate. Statement II : The higher density is provided to prevent the depletion region of the reverse biased isolation to substrate junction from extending into the p+ type material. In the light of the above statements, choose the most appropriate answer from the options given below :
Both Statement I and Statement II are correct
To determine the accuracy of the given statements, we need to analyze each one related to monolithic integrated circuits and isolation techniques:
Thus, comparing both statements with the theoretical underpinnings of isolation in CMOS and similar technologies confirms that:
Correct Answer: Both Statement I and Statement II are correct.
The evaporation rate from a clean surface is related to the equilibrium vapour pressure Pe of the evaporating species of molecular weight M by an expression :
Czochralski (Cz) method is used instead of using float zone technique to grow Si crystal because it produces :
Czochralski system of crystal growth is a
The thermal oxidation of silicon single crystal producer stacking faults lying on the plane.
The desired properties of metallization for integrated circuits are
A. low resistivity.
B. low conductivity.
C. easy to etch for pattern generation.
D. tough to etch for pattern generation.
E. no contamination with device or wafers.
Choose the correct answer from the options given below :
The major processing steps of BJT IC fabrication in VLSI technology are
A. Oxidation
B. Diffusion
C. Crystal growth
D. Photolithography
E. Epitaxial layer formation
Choose the correct ascending order from the options given below :
MEMS devices are within the size range of
Arrange the following fabrication steps in order needed to fabricate the IC :
(a) Oxidation (b) Etching (c) Metallization (d) Epitaxial growth
Codes :
Assertion (A) : In a bipolar IC fabrication, the diode isolation is used to isolate one device from the other.
Reason (R) : P+n diode used as isolation diode in IC fabrication.
Select your answer using the codes given below.
Assertion (A) : The epitaxial layer growth possesses the same crystal structure to that of the substrate on which it is grown.
Reason (R) : It can only be of similar conductivity type but possesses different value of resistivity to that of the substrate.
Select your answer using the codes given below.
Maximum component density for a given PCB size can be obtained by
In MOSFET fabrication, the channel length is defined during the process of
The desired property of gate and interconnection metallization is
In a silicon oxidation model, \(\rm \frac{B}{A}\) is the linear rate constant and τ accounts for the shift in the time coordinate to account for the presence of the initial oxide layer, then the linear law is represented as: