Given below are two statements : Statement I : Concentration of acceptor atoms in the region between isolation islands in a monolythic integrated circuit will be much higher then in a p-type substrate. Statement II : The higher density is provided to prevent the depletion region of the reverse biased isolation to substrate junction from extending into the p+ type material. In the light of the above statements, choose the most appropriate answer from the options given below :
Both Statement I and Statement II are correct
To determine the accuracy of the given statements, we need to analyze each one related to monolithic integrated circuits and isolation techniques:
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Statement I: Concentration of acceptor atoms in the region between isolation islands in a monolithic integrated circuit will be much higher than in a p-type substrate.
- Monolithic integrated circuits employ isolation techniques where the devices must be electrically isolated from each other. This isolation is often achieved by creating a p-n junction through diffusion processes.
- The regions between these isolation islands usually have a high concentration of acceptor atoms (p+ type) compared to the p-type substrate to maintain effective electrical isolation by limiting the spread of the depletion region.
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Statement II: The higher density is provided to prevent the depletion region of the reverse biased isolation to substrate junction from extending into the p+ type material.
- In a reverse-biased p-n junction, the depletion region forms at the junction interface. A higher acceptor concentration near these isolation regions helps ensure that the depletion region does not extend significantly into the p+ region, which could otherwise affect the isolation needed by allowing charge carriers to flow.
- Therefore, the higher doping in these regions serves exactly this purpose of controlling the depletion region, enhancing the isolation efficiency.
Thus, comparing both statements with the theoretical underpinnings of isolation in CMOS and similar technologies confirms that:
Correct Answer: Both Statement I and Statement II are correct.
Similar Questions
Arrange the following fabrication steps in order needed to fabricate the IC :
(a) Oxidation (b) Etching (c) Metallization (d) Epitaxial growth
Codes :
Assertion (A) : In a bipolar IC fabrication, the diode isolation is used to isolate one device from the other.
Reason (R) : P+n diode used as isolation diode in IC fabrication.
Select your answer using the codes given below.
Assertion (A) : The epitaxial layer growth possesses the same crystal structure to that of the substrate on which it is grown.
Reason (R) : It can only be of similar conductivity type but possesses different value of resistivity to that of the substrate.
Select your answer using the codes given below.
In an npn diffused junction transistor, the p-type base region is formed on the n-type collector region through the process of :
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Reason (R) : This is done by means of trimming.
Select your answer using the codes given below.
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Czochralski (Cz) method is used instead of using float zone technique to grow Si crystal because it produces :
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Important Questions from Device Technology
Arrange the following fabrication steps in order needed to fabricate the IC :
(a) Oxidation (b) Etching (c) Metallization (d) Epitaxial growth
Codes :
Assertion (A) : In a bipolar IC fabrication, the diode isolation is used to isolate one device from the other.
Reason (R) : P+n diode used as isolation diode in IC fabrication.
Select your answer using the codes given below.
Assertion (A) : The epitaxial layer growth possesses the same crystal structure to that of the substrate on which it is grown.
Reason (R) : It can only be of similar conductivity type but possesses different value of resistivity to that of the substrate.
Select your answer using the codes given below.
In an npn diffused junction transistor, the p-type base region is formed on the n-type collector region through the process of :
As per the standards set by the Department of Telecom, Government of India, for all the new designs of mobile handsets, the permissible Specific Absorption Rate (SAR) limit is _______ averaged over 1 gram of human tissue with effect from 1st September 2012.
