Arrange the following fabrication steps in order needed to fabricate the IC : (a) Oxidation (b) Etching (c) Metallization (d) Epitaxial growth Codes :
(d) (a) (b) (c)
In the fabrication of Integrated Circuits (ICs), various processes are employed in precise chronological order to create functional semiconductor devices. The given question requires us to arrange the steps in the correct sequence needed to fabricate an IC. Here is the step-by-step solution:
The first step in IC fabrication is often the epitaxial growth process. This involves growing a layer of single-crystal silicon on a substrate. This step is critical as it provides a high-quality crystal structure needed for the subsequent fabrication steps.
Once the epitaxial layer is prepared, the next step is oxidation. This process is used to create a high-quality silicon dioxide layer on the silicon wafer, which acts as an insulator and provides protection for the silicon underneath during future processing steps.
After oxidation, etching is carried out to remove specific areas of the oxide layer. This step is crucial for defining the regions where dopants will be diffused into the silicon or where further processing steps will take place.
The final step is metallization, where metal layers are deposited. These layers form the electrical connections, or interconnections, between different components on the chip. This step is essential for establishing the functionality of the IC.
Therefore, the correct sequence is: Epitaxial Growth → Oxidation → Etching → Metallization. This corresponds to option (d) (a) (b) (c).
Conclusion: Recognizing the importance of each fabrication step in IC design ensures a deep understanding of semiconductor device manufacturing processes, critical for students preparing for exams in Electronic Devices.
Czochralski system of crystal growth is a
The thermal oxidation of silicon single crystal producer stacking faults lying on the plane.
The desired properties of metallization for integrated circuits are
A. low resistivity.
B. low conductivity.
C. easy to etch for pattern generation.
D. tough to etch for pattern generation.
E. no contamination with device or wafers.
Choose the correct answer from the options given below :
The major processing steps of BJT IC fabrication in VLSI technology are
A. Oxidation
B. Diffusion
C. Crystal growth
D. Photolithography
E. Epitaxial layer formation
Choose the correct ascending order from the options given below :
MEMS devices are within the size range of
Given below are two statements :
Statement I : Concentration of acceptor atoms in the region between isolation islands in a monolythic integrated circuit will be much higher then in a p-type substrate.
Statement II : The higher density is provided to prevent the depletion region of the reverse biased isolation to substrate junction from extending into the p+ type material.
In the light of the above statements, choose the most appropriate answer from the options given below :
Assertion (A) : In a bipolar IC fabrication, the diode isolation is used to isolate one device from the other.
Reason (R) : P+n diode used as isolation diode in IC fabrication.
Select your answer using the codes given below.
Assertion (A) : The value of thin film resistor can be changed even after fabrication.
Reason (R) : This is done by means of trimming.
Select your answer using the codes given below.
Assertion (A) : The epitaxial layer growth possesses the same crystal structure to that of the substrate on which it is grown.
Reason (R) : It can only be of similar conductivity type but possesses different value of resistivity to that of the substrate.
Select your answer using the codes given below.
In an npn diffused junction transistor, the p-type base region is formed on the n-type collector region through the process of :
What is the process of designing more than 100 gates on a single chip?
As per the standards set by the Department of Telecom, Government of India, for all the new designs of mobile handsets, the permissible Specific Absorption Rate (SAR) limit is _______ averaged over 1 gram of human tissue with effect from 1st September 2012.
In a silicon oxidation model, \(\rm \frac{B}{A}\) is the linear rate constant and τ accounts for the shift in the time coordinate to account for the presence of the initial oxide layer, then the linear law is represented as:
Which of the following are the major steps which are taken to troubleshoot a microcomputer system? Assume all ICs are in the socket.
A. Identify the symptoms and make a careful visual and tactical inspection.
B. Check the power supply.
C. Switch OFF and ON the system.
D. Check the control signals such as
\(\rm \overline{RD}, \overline{WR}\) , ALE, RDY and RESET
Choose the correct answer from the options given below:
The desired property of gate and interconnection metallization is