Arrange the following fabrication steps in order needed to fabricate the IC : (a) Oxidation (b) Etching (c) Metallization (d) Epitaxial growth Codes :
(d) (a) (b) (c)
In the fabrication of Integrated Circuits (ICs), various processes are employed in precise chronological order to create functional semiconductor devices. The given question requires us to arrange the steps in the correct sequence needed to fabricate an IC. Here is the step-by-step solution:
- Epitaxial Growth:
The first step in IC fabrication is often the epitaxial growth process. This involves growing a layer of single-crystal silicon on a substrate. This step is critical as it provides a high-quality crystal structure needed for the subsequent fabrication steps.
- Oxidation:
Once the epitaxial layer is prepared, the next step is oxidation. This process is used to create a high-quality silicon dioxide layer on the silicon wafer, which acts as an insulator and provides protection for the silicon underneath during future processing steps.
- Etching:
After oxidation, etching is carried out to remove specific areas of the oxide layer. This step is crucial for defining the regions where dopants will be diffused into the silicon or where further processing steps will take place.
- Metallization:
The final step is metallization, where metal layers are deposited. These layers form the electrical connections, or interconnections, between different components on the chip. This step is essential for establishing the functionality of the IC.
Therefore, the correct sequence is: Epitaxial Growth → Oxidation → Etching → Metallization. This corresponds to option (d) (a) (b) (c).
Conclusion: Recognizing the importance of each fabrication step in IC design ensures a deep understanding of semiconductor device manufacturing processes, critical for students preparing for exams in Electronic Devices.
Similar Questions
Given below are two statements :
Statement I : Concentration of acceptor atoms in the region between isolation islands in a monolythic integrated circuit will be much higher then in a p-type substrate.
Statement II : The higher density is provided to prevent the depletion region of the reverse biased isolation to substrate junction from extending into the p+ type material.
In the light of the above statements, choose the most appropriate answer from the options given below :
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Reason (R) : P+n diode used as isolation diode in IC fabrication.
Select your answer using the codes given below.
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Important Questions from Device Technology
Given below are two statements :
Statement I : Concentration of acceptor atoms in the region between isolation islands in a monolythic integrated circuit will be much higher then in a p-type substrate.
Statement II : The higher density is provided to prevent the depletion region of the reverse biased isolation to substrate junction from extending into the p+ type material.
In the light of the above statements, choose the most appropriate answer from the options given below :
Assertion (A) : In a bipolar IC fabrication, the diode isolation is used to isolate one device from the other.
Reason (R) : P+n diode used as isolation diode in IC fabrication.
Select your answer using the codes given below.
Assertion (A) : The epitaxial layer growth possesses the same crystal structure to that of the substrate on which it is grown.
Reason (R) : It can only be of similar conductivity type but possesses different value of resistivity to that of the substrate.
Select your answer using the codes given below.
In an npn diffused junction transistor, the p-type base region is formed on the n-type collector region through the process of :
As per the standards set by the Department of Telecom, Government of India, for all the new designs of mobile handsets, the permissible Specific Absorption Rate (SAR) limit is _______ averaged over 1 gram of human tissue with effect from 1st September 2012.
