Czochralski system of crystal growth is a
Liquid-solid mono-component growth system
What the Czochralski (CZ) process is. It is the standard industrial method for growing the large single-crystal silicon ingots from which wafers are sliced. Electronic-grade polysilicon is melted in a fused-silica crucible at about 1420 °C; a small, precisely oriented seed crystal is dipped into the melt and then slowly pulled upward while both seed and crucible rotate. Atoms from the melt attach themselves to the seed and solidify with the same crystal orientation, so a large cylindrical single crystal (boule) grows continuously from the liquid.
Classifying it — the two things the option asks about.
Phase transition: the material starts as a molten liquid and ends as a solid crystal, so this is a liquid-to-solid (melt-growth) system. It is not solid-solid, which would describe processes such as solid-phase recrystallisation or strain-anneal grain growth, where no melt is involved.
Number of components: the melt and the crystal are the same single material — silicon. Nothing else is required to form the crystal (the dopant added to the melt is present in parts-per-million and does not constitute a second component of the growth system). It is therefore a mono-component system. A bi-component system is one where the growing solid is formed from two distinct constituents, as in compound-semiconductor growth (e.g. Ga and As for GaAs) or in solution/vapour growth where the crystal is deposited from a carrier or solvent.
Related methods worth knowing. Float-zone (FZ) growth is also liquid–solid and mono-component but uses no crucible, so it yields lower oxygen contamination and higher purity; Bridgman–Stockbarger is another melt (liquid–solid) technique; epitaxy from a gas source is a vapour–solid process.
Hence, the Czochralski method is a liquid–solid, mono-component growth system.
Similar Questions
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E. no contamination with device or wafers.
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Statement II : The higher density is provided to prevent the depletion region of the reverse biased isolation to substrate junction from extending into the p+ type material.
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Arrange the following fabrication steps in order needed to fabricate the IC :
(a) Oxidation (b) Etching (c) Metallization (d) Epitaxial growth
Codes :
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Reason (R) : P+n diode used as isolation diode in IC fabrication.
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Assertion (A) : The epitaxial layer growth possesses the same crystal structure to that of the substrate on which it is grown.
Reason (R) : It can only be of similar conductivity type but possesses different value of resistivity to that of the substrate.
Select your answer using the codes given below.
In an npn diffused junction transistor, the p-type base region is formed on the n-type collector region through the process of :
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