Ebers-Moll model of BJT has two coupled back to back diodes in parallel with controlled current sources. Which of the following is/are correct for switching applications ? (1) If two diodes are both in forward bias, then the BJT is in a low impedance state. (2) If two diodes are both in reverse bias, then BJT is in a high impedance state. (3) If two diodes are both in forward bias, then the BJT is in high impedance state. (4) If two diodes are both in reverse bias, then BJT is in low impedance state.
1 and 2
In the Ebers-Moll model the emitter-base and collector-base junctions are the two coupled diodes.
Both junctions forward biased: saturation region, \(V_{CE(sat)} \approx 0.2\) V with large current, so the transistor is a closed switch (low impedance). Statement (1) is true and (3) is false.
Both junctions reverse biased: cut-off region, only leakage current flows, so the transistor is an open switch (high impedance). Statement (2) is true and (4) is false.
So only statements (1) and (2) are correct.
Hence, 1 and 2.
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