The voltage safety factor (Vf) of a thyristor is given by :
\(V_f=\dfrac{V_{PIV}}{\sqrt{2}\cdot\text{R.M.S. value of the operating voltage}}\)
The definition. The voltage safety factor compares the thyristor's rated peak inverse voltage with the peak of the supply it must withstand:
\(V_f=\dfrac{V_{PIV}}{\sqrt2\times V_{rms}}\)
which is option 2.
Why the \(\sqrt2\) is there and why it multiplies rather than covers the whole denominator. Supply voltages are always quoted as RMS, but the device sees the instantaneous peak. For a sinusoid,
\(V_{peak}=\sqrt2\,V_{rms}\)
so the denominator \(\sqrt2\,V_{rms}\) is simply the peak voltage the thyristor must block. This is precisely what separates option 2 from option 1, where the radical is drawn over the entire denominator — that would give \(\sqrt{2V_{rms}}\), a quantity with the dimensions of the square root of a voltage, which cannot be compared with VPIV at all. A dimensional glance settles the pair.
Why options 3 and 4 fail. Option 3 multiplies the maximum value by \(\sqrt2\) as well, converting the peak into \(\sqrt2\) times the peak — the factor is applied twice. Option 4 uses the average, which for a full sine is zero and for a rectified one is \(2V_m/\pi\); neither is the stress the device actually experiences, since blocking is an instantaneous matter, not an averaged one.
A worked example. On a 230 V RMS mains the peak is
\(\sqrt2\times230=325\ \text{V}\)
so a thyristor rated at 1200 V PIV gives
\(V_f=\dfrac{1200}{325}=3.7\)
comfortably inside the usual design range of 2 to 3 or more.
Why so generous a margin is needed. Line transients, switching surges from inductive loads and the reverse-recovery spike of the device itself can all momentarily exceed the nominal peak by a large factor. And the failure is unforgiving: exceeding VPIV drives the thyristor into reverse avalanche and destroys it, unlike an overcurrent which a fuse can clear. Snubber networks and metal-oxide varistors are added for the same reason.
Hence, \(V_f=\dfrac{V_{PIV}}{\sqrt2\times\text{RMS value of the operating voltage}}\).
Which of the following statements are true for SCR ?
(a) UJT is a phase controlling device for SCR rectifier.
(b) The average load voltage of SCR rectifier is greater than average load voltage of ordinary diode rectifier.
(c) Power delivered to the load in SCR rectifier is maximum when SCR firing angle is zero degree.
(d) SCR can control the amount of power fed to the load by switching current OFF and ON upto many thousand times a second.
In two transistor model of an SCR the expression for anode current is given by:

Match the following lists :
| List - I | List - II |
| a. SCR can be turned off by | i. it turns off when anode current falls below this value. |
| b. Turn on time of SCR can be reduced by | ii. the rectangular pulse of high amplitude and narrow width |
| c. Holding current for an SCR means | iii. its anode current interruption |
| d. A forward current can be applied to an SCR after | iv. its gate recovery time |
Correct Codes are :
In SCR, the following statements are given :
(a) It acts as a short circuit device.
(b) It acts as an open circuit device.
(c) ON state voltage is approximately 2-5 Volts.
(d) ON state voltage is approximately 50-100 Volts.
Which of the above statements are correct ?
An SCR is turned off by :
For a two transistor model, the value of α1 + α2 is equal to :
_______ is the device which acts like an N-P-N and a P-N-P transistor connected base-to-base and emitter-to-collector.
SCR stands for
A conducting SCR can be opened by reducing __________to zero.
Which of the following statements correctly describes the structure of a Silicon Controlled Rectifier (SCR)?
The thyristors which have a turn-off time less than _________ are called inverter grade thyristors.