In an n-channel enhancement mode MOSFET, what must be applied to the gate terminal relative to the source to turn the device on?
A positive voltage
To turn on an n-channel enhancement mode MOSFET, a positive voltage must be applied to the gate terminal relative to the source. This positive gate voltage induces a strong electric field that attracts electrons towards the gate, forming an n-type channel between the source and drain. Here is the step-by-step explanation:
- In an enhancement mode MOSFET, the device is normally off when there is no gate voltage applied. The gate-to-source voltage needs to be increased to a positive value above a certain threshold voltage to create the conduction channel.
- The gate of an n-channel MOSFET is usually made of a material like polysilicon, separated from the channel by a thin silicon dioxide layer. This configuration makes the gate an insulated gate.
- When a positive voltage is applied to the gate relative to the source, it establishes an electric field across the oxide layer.
- This field induces a channel of mobile electrons in the p-type substrate beneath the gate, allowing current to flow from the drain to the source when a voltage is applied across them.
- Options such as 'a zero voltage' or 'a negative voltage' would not create the necessary channel for conduction in an n-channel enhancement MOSFET. 'A gate current' does not apply since the gate current in a MOSFET (ideally) is zero due to the insulating oxide layer.
Therefore, the correct answer is: A positive voltage.
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