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Question

In an n-channel enhancement mode MOSFET, what must be applied to the gate terminal relative to the source to turn the device on?

This question was previously asked in
RRB ALP 2025 CBT 2 Wiremen Question Paper (28-Jul-2026) (Shift 2)
The correct answer is

A positive voltage

To turn on an n-channel enhancement mode MOSFET, a positive voltage must be applied to the gate terminal relative to the source. This positive gate voltage induces a strong electric field that attracts electrons towards the gate, forming an n-type channel between the source and drain. Here is the step-by-step explanation:

  1. In an enhancement mode MOSFET, the device is normally off when there is no gate voltage applied. The gate-to-source voltage needs to be increased to a positive value above a certain threshold voltage to create the conduction channel.
  2. The gate of an n-channel MOSFET is usually made of a material like polysilicon, separated from the channel by a thin silicon dioxide layer. This configuration makes the gate an insulated gate.
  3. When a positive voltage is applied to the gate relative to the source, it establishes an electric field across the oxide layer.
  4. This field induces a channel of mobile electrons in the p-type substrate beneath the gate, allowing current to flow from the drain to the source when a voltage is applied across them.
  5. Options such as 'a zero voltage' or 'a negative voltage' would not create the necessary channel for conduction in an n-channel enhancement MOSFET. 'A gate current' does not apply since the gate current in a MOSFET (ideally) is zero due to the insulating oxide layer.

Therefore, the correct answer is: A positive voltage.

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