Atomic numbers for the following semiconducting and doping materials like Ga, In, As, Sb are respectively : A. 33 B. 49 C. 31 D. 51 Choose the correct answer from the options given below :
C$\longrightarrow$ B$\longrightarrow$ A$\longrightarrow$ D
To determine the correct order of atomic numbers for the elements Gallium (Ga), Indium (In), Arsenic (As), and Antimony (Sb), we need to first identify their atomic numbers:
Given this information, we can classify these elements by their atomic numbers as follows:
Now, let's match these numbers with the provided options:
Thus, the correct order based on atomic numbers is C → B → A → D.
Arrange the following materials in ascending order based on their mobility of electrons at 300 K :
(a) Germanium (b) Silicon (c) Gallium Arsenide (d) Gallium Nitride
Codes :
Energy bands of a material is decided by :
(a) The atomic number
(b) Relative spacing of atoms in the solids
(c) Melting point of the material
(d) Hardness of the material
Which of the following is correct ?
Arrange the following materials with respect to their relative dielectric constants in descending orders :
(A) Ge
(B) C
(C) CdS
(D) TiO2
Choose the most appropriate answer from the options given below :
The most common kind of area defect found in silicon is the ________ and it always occur along ________ plane.
| LIST-I | LIST-II |
| A. BJT | I. Five layers and four junction device |
| B. MOSFET | II. Power switching device with fast acting features and high power capability with voltage control features |
| C. IGBT | III. Voltage controlled device |
| D. DIAC | IV. Current controlled device |
The common drain circuit has a FET with $Y_{fs}$=3000 µS, $R_{gs}$=100 MΩ and $r_d$=50 KΩ. Determine the device input impedance. 