Assertion (A) : The Gunn diode characteristics shows the region of negative resistance. Reason (R) : The Gunn diode is made of n-type and p-type degenerate semiconductor. Select your answer using the codes given below.
(A) is true, but (R) is false.
To solve the question regarding the assertion and reason about the Gunn diode, let's first understand the relevant concepts:
Based on the analysis, the correct answer is: (A) is true, but (R) is false.
A PIN diode can not be used as
i. Microwave switch
ii. Microwave mixer
iii. Microwave detector
Which is correct ?
________ diode is not used as a microwave mixer or detector.
Match the given lists :
| List – I (Name of the Device) | List – II (Application) |
| a. Diode | i. Rectification |
| b. Tunnel diode | ii. Microwave switching |
| c. Zener diode | iii. An oscillator |
| d. PIN diode | iv. Voltage regulation |
Codes :
An important figure of merit for microwave application of Schottky diode is forward bias cut off frequency fco and is given by :
Assertion (A) : A tunnel diode consists of simple p-n junction mode of degenerate semiconductor. The current voltage characteristics consists of three components and shows the negative differential region over part of the forward characteristics.
Reason (R) : In tunnel diode the p-side is highly doped and n-side is highly doped and also used as detector.
Varacter diodes have the following properties :
A. Junction capacitance varies with bias voltage
B. Junction capacitance varies with time
C. Non linearity of varacter diodes makes them suitable for frequency multipliers
D. Linearity of varactor diode makes them suitable for frequency multipliers.
Choose the correct answer from the options given below:
In a tunnel diode, the degeneracy on the n-side can be expressed as
The static current voltage characteristics of a tunnel diode consist of
(a) Tunneling current and thermal current
(b) Thermal current and excess current
(c) Tunneling current only
(d) Tunneling current, excess current and thermal current
Out of these which are correct ?
Match the following :
| List – I | List – II |
| a. Gunn diode | i. degenerate silicon |
| b. Tunnel diode | ii. n-type Ga As |
| c. BJT | iii. Silicon |
| d. Diode (P-N junction) | iv. \(I_o\left[\exp\left(\dfrac{qV}{kT}\right)-1\right]\) |
Choose the correct answer from the codes given below:
A TRAPATT diode has the doping concentration NA = 2 x 1015/cm3 and a current density of 20 kA/cm2. The value of avalanche zone velocity is given by :
For which of the following diodes when the voltage is increased the current flowing through it decreases?
Which of the following is the main application of Zener diode?
A tunnel diode is
When we tune in any desired station in a radio receiver by rotating the tuning control we vary
Which diode is used as a voltage regulator?