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Question

Assertion (A) : The Gunn diode characteristics shows the region of negative resistance.

Reason (R) : The Gunn diode is made of n-type and p-type degenerate semiconductor.

Select your answer using the codes given below.

This question was previously asked in
UGC NET 2016 Paper 3 Electronic Science Question Paper (10-Jul-2016)
The correct answer is

(A) is true, but (R) is false.

To solve the question regarding the assertion and reason about the Gunn diode, let's first understand the relevant concepts:

Conceptual Explanation:

  • Gunn Diode and Negative Resistance: A Gunn diode is a type of diode used in high-frequency electronics. It is unique because it exhibits a region of negative differential resistance in its current-voltage characteristics. This means that an increase in voltage across the diode leads to a decrease in current, which is utilized to generate microwave frequencies.
  • Structure of a Gunn Diode: Contrary to typical semiconductor devices, the Gunn diode is not made by junctions of p-type and n-type semiconductors. Instead, it is formed solely from n-type semiconductor material, often gallium arsenide (GaAs) or indium phosphide (InP). The diode operates on the Gunn effect, which relates to the transfer of electrons between energy valleys in the semiconductor's conduction band.

Analysis of Assertion and Reason:

  1. Assertion (A): The Gunn diode characteristics show the region of negative resistance.
    This statement is true because the Gunn diode naturally exhibits negative differential resistance, which is exploited to produce microwave frequencies.
  2. Reason (R): The Gunn diode is made of n-type and p-type degenerate semiconductor.
    This statement is false because Gunn diodes do not have a p-n junction; they are constructed from a single type of semiconductor (n-type). The assertion mistakenly suggests a composition involving both n-type and p-type semiconductors, which is not the case.

Conclusion:

Based on the analysis, the correct answer is: (A) is true, but (R) is false.

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Similar Questions

  1. A PIN diode can not be used as

    i. Microwave switch
    ii. Microwave mixer
    iii. Microwave detector

    Which is correct ?

  2. ________ diode is not used as a microwave mixer or detector.

  3. Match the given lists :

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    Codes :

  4. An important figure of merit for microwave application of Schottky diode is forward bias cut off frequency fco and is given by :

  5. Assertion (A) : A tunnel diode consists of simple p-n junction mode of degenerate semiconductor. The current voltage characteristics consists of three components and shows the negative differential region over part of the forward characteristics.

    Reason (R) : In tunnel diode the p-side is highly doped and n-side is highly doped and also used as detector.

  6. Varacter diodes have the following properties :

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    B. Junction capacitance varies with time

    C. Non linearity of varacter diodes makes them suitable for frequency multipliers

    D. Linearity of varactor diode makes them suitable for frequency multipliers.

    Choose the correct answer from the options given below:

  7. In a tunnel diode, the degeneracy on the n-side can be expressed as

  8. The static current voltage characteristics of a tunnel diode consist of

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  9. Match the following :

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    Choose the correct answer from the codes given below:

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Important Questions from Types of Diode

  1. For which of the following diodes when the voltage is increased the current flowing through it decreases?

  2. Which of the following is the main application of Zener diode?

  3. A tunnel diode is

  4. When we tune in any desired station in a radio receiver by rotating the tuning control we vary

  5. Which diode is used as a voltage regulator?

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