A PIN diode can not be used as i. Microwave switch Which is correct ?
ii. Microwave mixer
iii. Microwave detector
ii, iii
A PIN diode is an excellent microwave switch but a poor mixer and a poor detector — so the things it cannot do are ii and iii, option 2.
The structure explains everything. A PIN diode has a thick intrinsic layer between its p and n regions. Under forward bias this layer floods with stored charge, and that charge takes a long time — the carrier lifetime, typically hundreds of nanoseconds to microseconds — to recombine.
| Application | Needs | PIN diode? |
|---|---|---|
| Switch, attenuator | Resistance controlled by bias | ✓ Ideal |
| Mixer | Non-linearity at the RF rate | ✗ |
| Detector | Rectification at the RF rate | ✗ |
Why the switch works so well. Above roughly
\(f\gt\dfrac{1}{2\pi\tau}\)
the stored charge cannot follow the RF cycle at all, so the diode presents a constant resistance rather than rectifying. That resistance is set by the DC bias current alone — a few tenths of an ohm when forward biased, several kilohms when reverse biased. The device therefore behaves as a current-controlled linear resistor at microwave frequencies: an ideal switch or variable attenuator, and one that introduces no distortion because it is linear to the RF signal.
Why mixing and detection fail — for the very same reason. Both operations require non-linearity at the signal frequency: a mixer must multiply two signals to produce sum and difference frequencies, and a detector must rectify. The PIN diode's slow charge storage is exactly what removes that non-linearity. The property that makes it a superb switch is the property that disqualifies it for the other two roles.
What is used instead : the Schottky barrier diode, a majority-carrier device with essentially no stored charge, which switches in picoseconds and so remains strongly non-linear well into the millimetre-wave region. Schottky diodes are the standard microwave mixer and detector elements; PIN diodes handle switching, limiting and attenuation.
The answer is flagged because PIN photodiodes are the standard optical detectors, which can make statement iii look wrong; but in the microwave context of this question, detection means RF rectification, which the PIN diode cannot perform.
Hence, a PIN diode cannot be used as a microwave mixer or detector.
________ diode is not used as a microwave mixer or detector.
Match the given lists :
| List – I (Name of the Device) | List – II (Application) |
| a. Diode | i. Rectification |
| b. Tunnel diode | ii. Microwave switching |
| c. Zener diode | iii. An oscillator |
| d. PIN diode | iv. Voltage regulation |
Codes :
An important figure of merit for microwave application of Schottky diode is forward bias cut off frequency fco and is given by :
Assertion (A) : A tunnel diode consists of simple p-n junction mode of degenerate semiconductor. The current voltage characteristics consists of three components and shows the negative differential region over part of the forward characteristics.
Reason (R) : In tunnel diode the p-side is highly doped and n-side is highly doped and also used as detector.
Varacter diodes have the following properties :
A. Junction capacitance varies with bias voltage
B. Junction capacitance varies with time
C. Non linearity of varacter diodes makes them suitable for frequency multipliers
D. Linearity of varactor diode makes them suitable for frequency multipliers.
Choose the correct answer from the options given below:
In a tunnel diode, the degeneracy on the n-side can be expressed as
The static current voltage characteristics of a tunnel diode consist of
(a) Tunneling current and thermal current
(b) Thermal current and excess current
(c) Tunneling current only
(d) Tunneling current, excess current and thermal current
Out of these which are correct ?
Match the following :
| List – I | List – II |
| a. Gunn diode | i. degenerate silicon |
| b. Tunnel diode | ii. n-type Ga As |
| c. BJT | iii. Silicon |
| d. Diode (P-N junction) | iv. \(I_o\left[\exp\left(\dfrac{qV}{kT}\right)-1\right]\) |
Choose the correct answer from the codes given below:
A TRAPATT diode has the doping concentration NA = 2 x 1015/cm3 and a current density of 20 kA/cm2. The value of avalanche zone velocity is given by :
Assertion (A) : The Gunn diode characteristics shows the region of negative resistance.
Reason (R) : The Gunn diode is made of n-type and p-type degenerate semiconductor.
Select your answer using the codes given below.
For which of the following diodes when the voltage is increased the current flowing through it decreases?
Which of the following is the main application of Zener diode?
A tunnel diode is
When we tune in any desired station in a radio receiver by rotating the tuning control we vary
Which diode is used as a voltage regulator?