A Silicon Controlled Rectifier (SCR) is a semiconductor device primarily used for controlling high power loads.
Its internal structure can be understood as comprising two complementary transistors: one NPN and one PNP.
These transistors are interconnected in a specific feedback configuration:
This arrangement, where the bases are effectively cross-connected via the collectors, forms the fundamental operational principle of the SCR. This structure is conceptually similar to the description of NPN and PNP transistors connected base-to-base.
Among the given options, the SCR is the device that accurately represents this NPN and PNP transistor combination.
IGBT (Insulated Gate Bipolar Transistor) has ____
Which semiconductor power device, out of the following, is not a current triggered device?
Diacs are primarily used as:
Which of the following circuit is used to obtain pulse gate triggering?
The figure shows a straight-line approximation for the forward characteristics of a power diode. A continuous on-state current of 15 A is flowing through the diode.

What is the power loss in the diode?
For a system with $G(S)=\frac{k}{S(S+1)(S+2)}$, $H(S)=1$. Determine the brake away point.