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Question

The maximum peak emitter current of UJT at 25°C is:

The correct answer is

2 A

UJT Maximum Peak Emitter Current at 25°C

The Unijunction Transistor (UJT) is a semiconductor device that has only one junction. It is primarily used in relaxation oscillators, timing circuits, and triggering circuits for silicon controlled rectifiers (SCRs) and triacs.

The emitter of a UJT is one of its three terminals (Emitter, Base 1, and Base 2). When the emitter voltage exceeds the voltage at which the UJT fires, current flows from the emitter into the base region. The peak emitter current ($I_p$) is the maximum current that can flow into the emitter just before the device enters its negative resistance region. This is an important characteristic for designing UJT-based circuits, especially for triggering or pulse generation.

Manufacturers specify the maximum peak emitter current that a UJT can handle, usually at a standard temperature like 25°C. Exceeding this value can potentially damage the device, although the pulse nature of this current means the average current is much lower.

For many common UJT types, the typical maximum peak emitter current specified at 25°C is around 2 A. This value represents the pulse current capability during the switching event.

Considering the options provided:

  • 30 A: This value is generally too high for the peak emitter current of a standard UJT.
  • 2 A: This value aligns well with the typical maximum peak emitter current specifications for many commonly used UJT devices at 25°C.
  • 150 A: This is an excessively high current and not a typical peak emitter current rating for a UJT.
  • 50 μA: This value is very low; 50 µA is more in the range of the valley current ($I_v$), which is the minimum current to sustain conduction after firing, or possibly the emitter leakage current. The peak emitter current is significantly higher than the valley current.

Therefore, a maximum peak emitter current of 2 A at 25°C is a standard specification for many UJTs, representing its capability to handle a significant current pulse during the switching phase.

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Important Questions from Power Semiconductor Diodes and Transistors

  1. Diacs are primarily used as:

  2. A modern power semiconductor device that combines the characteristics of BJT and MOSFET is:

  3. Which of the following circuit is used to obtain pulse gate triggering?

  4. A charger supplies 100 W at 20 V for charging the battery of a laptop. The power devices, used in the converter inside the charger, operate at a switching frequency of 200 kHz. Which power device is best suited for this purpose?

  5. Which semiconductor power device, out of the following, is not a current triggered device?

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