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Question

The primary difference between a FET and a BJT is that _______.

This question was previously asked in
RRB NTPC 2024 Undergraduate CBT 1 Question Paper (29-Aug-2025) (Shift 1)
The correct answer is

FETs are voltage-controlled devices, while BJTs are current-controlled devices

The primary difference between a Field Effect Transistor (FET) and a Bipolar Junction Transistor (BJT) is in how they are controlled:

1. FETs (Field Effect Transistors): These are voltage-controlled devices. This means the operation of a FET is controlled by the voltage applied to the gate terminal. The input voltage affects the flow of current between the source and drain, allowing these devices to control large currents with smaller power loss. FETs typically have high input impedance, which makes them suitable for input stages of amplifiers where minimizing the current drawn from the preceding stage is important.

2. BJTs (Bipolar Junction Transistors): These are current-controlled devices. A BJT's operation relies on the base current to control the larger current flow between the collector and emitter terminals. BJTs are recognized for their capability to amplify signals, as a small change in the input base current can lead to a large change in the output collector current.

Therefore, the primary difference is that FETs are controlled by voltage, whereas BJTs are controlled by current, leading to unique applications and characteristics for each type of transistor.

The correct answer is: FETs are voltage-controlled devices, while BJTs are current-controlled devices.

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Important Questions from Bipolar Junction Transistors

  1. The __________ area in the transistor is considerably smaller than the collector area.

  2. For a common emitter connection of BJT, find the value of β if α = 0.995

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