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Question

In a bipolar junction transistor, the collector current is

This question was previously asked in
UGC NET 2016 Paper 3 Electronic Science Question Paper (10-Jul-2016)
The correct answer is

\(\dfrac{\alpha_F I_B}{1-\alpha_F}+\dfrac{I_{CO}}{1-\alpha_F}\)

Start from the common-base relation, which is where αF is defined:

\(I_C=\alpha_F I_E + I_{CO}\)

where ICO is the collector-base reverse saturation (leakage) current.

Bring in Kirchhoff's current law for the three terminals:

\(I_E=I_B+I_C\)

Substitute and collect the IC terms.

\(I_C=\alpha_F(I_B+I_C)+I_{CO}\)

\(I_C-\alpha_F I_C=\alpha_F I_B+I_{CO}\)

\(I_C(1-\alpha_F)=\alpha_F I_B+I_{CO}\)

Divide through.

\(I_C=\dfrac{\alpha_F I_B}{1-\alpha_F}+\dfrac{I_{CO}}{1-\alpha_F}\)

which is option 2.

Recognise the familiar form hidden inside it. Since

\(\beta=\dfrac{\alpha_F}{1-\alpha_F} \qquad\text{and}\qquad 1+\beta=\dfrac{1}{1-\alpha_F}\)

the same equation reads

\(I_C=\beta I_B+(1+\beta)I_{CO}=\beta I_B + I_{CEO}\)

the standard common-emitter result. That is also why leakage is so much more troublesome in the CE configuration: the small ICO is multiplied by (1 + β), which for αF = 0.99 means a factor of 100.

Eliminating the other options. Option 1 drops the αF from the base-current term, so it would give the wrong gain. Option 3 is dimensionally impossible — \(\alpha_F/(1-\alpha_F)\) is a pure number being added to a current. Option 4 has (1 + αF) in the denominator, which would make the current gain less than 1 instead of large.

Hence, \(I_C=\dfrac{\alpha_F I_B}{1-\alpha_F}+\dfrac{I_{CO}}{1-\alpha_F}\).

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Similar Questions

  1. In a BJT the collector current in common emitter configuration is

  2. Which one of the below referred figure represents the cut-off of npn or pnp transistor ?

     


Important Questions from Bipolar Junction Transistors

  1. For a common emitter connection of BJT, find the value of β if α = 0.995

  2. Which represents the Transport Factor of BJT?
  3. For a bipolar junction transistor in common emitter mode, IC = maximum and VC (collector voltage) = VE (emitter voltage), the transistor operates in _____ mode.

  4. High frequency transistors are designed especially for:

  5. For an ideal transistor, the reverse parameters (h o& h r) are
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