Statements (B), (C) and (D) are correct — option 3 — while (A) and (E) each get one crucial word wrong.

(A) fails on "open circuit". \(I_{DSS}\) is defined with the gate shorted to the source, that is \(V_{GS}=0\), and with the device in saturation. The subscript itself says so: Drain to Source current with the gate Shorted. An open gate would leave its potential undefined, floating on leakage and stray charge, so no repeatable current could be specified at all.

(B) is correct arithmetic. Voltage gain in decibels uses the factor 20:

\(A_{V}=10^{100/20}=10^{5}=100{,}000\)

The factor is 20 rather than 10 because decibels are defined on power, and power varies as the square of voltage.

(C) states the Miller effect correctly. A capacitance \(C_{f}\) bridging input and output of an inverting stage appears at the input multiplied by the gain:

\(C_{in}=C_{f}\left(1+\left|A_{V}\right|\right)\)

because the far end of the capacitor moves in anti-phase, so the voltage across it is \(\left(1+|A_{V}|\right)\) times the input swing and it draws that much more current. Both dependences the statement names — on gain and on \(C_{f}\) — are right, and this is why a common-emitter stage's bandwidth falls as its gain rises.

(D) is correct, and is a matter of attribution. The hybrid-π high-frequency model of the bipolar transistor is named the Giacoletto model after L. J. Giacoletto, who introduced it at RCA in 1969.

(E) is exactly inverted, which is what decides the answer. The stability factor is

\(S=\dfrac{\partial I_{C}}{\partial I_{CO}}\)

— it measures how much the collector current moves when the leakage current changes. A large S therefore means a large drift and a poor circuit; the ideal is \(S=1\). Fixed bias has \(S=1+\beta\), the worst possible, while voltage-divider bias with an emitter resistor brings it down to a few units. The statement calls a high stability factor stable, which reverses the meaning of the quantity.

Hence, the correct statements are (B), (C) and (D).