For a rectifier circuit, the form factor (Kf) is reduced while all other operating conditions remain unchanged. What is the effect on the ripple factor?
It decreases because the ripple factor depends directly on the form factor.
Form factor of a rectified wave is \(K_f = \frac{V_{rms}}{V_{dc}}\) and ripple factor is \(\gamma = \frac{V_{ac(rms)}}{V_{dc}}\).
Since \(V_{rms}^2 = V_{dc}^2 + V_{ac}^2\), dividing by \(V_{dc}^2\) gives \(\gamma = \sqrt{K_f^2 - 1}\).
So the ripple factor rises and falls with the form factor: a smaller Kf means the RMS value is closer to the DC value, i.e. less AC content, and γ decreases.
The other options fail: γ is directly linked to Kf through the relation above, so it is not independent of it; a lower Kf means relatively more DC, not less; and the relation is monotonic, so there is no decrease-then-increase behaviour.
Hence, the answer is It decreases because the ripple factor depends directly on the form factor.
Similar Questions
If the forward voltage drop of each conducting diode is Vf, which expression gives the peak output voltage of a full-wave bridge rectifier in terms of the input peak voltage of the transformer secondary Vp(in)?
How does the peak inverse voltage requirement of a full-wave bridge rectifier compare to that of a center-tapped full-wave rectifier for a given transformer secondary voltage?
A center-tapped full-wave rectifier has a transformer secondary voltage of 200 VRMS per half winding. Which of the following minimum diode Peak Inverse Voltage (PIV) ratings should be selected for reliable operation?
Important Questions from Diodes and Its Applications
Which of the following statements is FALSE about LED lamps?
A Zener diode is used in _______ for voltage regulation.
Which of the following diodes can be used as Voltage Regulator if used in reverse bias?
What is it called when a diode exceeds the reverse voltage and then it fails and passes more current in the reverse direction?
Determine the resonant frequency of an IMPATT diode having the following specifications:
Carrier drift velocity: 2 × 107 cm/s
Drift-region length: 5 μm
Maximum operating voltage: 100 V
Maximum operating current: 250 mA
Efficiency: 20%
Breakdown voltage: 90 V
