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Question

A center-tapped full-wave rectifier has a transformer secondary voltage of 200 VRMS per half winding. Which of the following minimum diode Peak Inverse Voltage (PIV) ratings should be selected for reliable operation?

This question was previously asked in
RRB Technician 2026 Grade 3 Question Paper (7-Oct-2026) (Shift 3)
The correct answer is

600 V

In a centre-tapped full-wave rectifier, the non-conducting diode must withstand the full secondary voltage across both halves, so \(\text{PIV} = 2V_m\), where \(V_m\) is the peak voltage of each half winding.

Peak voltage per half winding: \(V_m = \sqrt{2} \times V_{rms} = 1.414 \times 200 \approx 282.8\ \text{V}\).

\(\text{PIV} = 2 \times 282.8 \approx 565.7\ \text{V}\).

The diode rating must be at least 565.7 V; 200 V and 400 V are below this, and 550 V is also too low. The nearest safe standard rating is 600 V.

Hence, the answer is 600 V.

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Similar Questions

  1. For a rectifier circuit, the form factor (Kf) is reduced while all other operating conditions remain unchanged. What is the effect on the ripple factor?

  2. If the forward voltage drop of each conducting diode is Vf, which expression gives the peak output voltage of a full-wave bridge rectifier in terms of the input peak voltage of the transformer secondary Vp(in)?

  3. How does the peak inverse voltage requirement of a full-wave bridge rectifier compare to that of a center-tapped full-wave rectifier for a given transformer secondary voltage?


Important Questions from Diodes and Its Applications

  1. Which of the following statements is FALSE about LED lamps?

  2. A Zener diode is used in _______ for voltage regulation.

  3. Which of the following diodes can be used as Voltage Regulator if used in reverse bias?

  4. What is it called when a diode exceeds the reverse voltage and then it fails and passes more current in the reverse direction?

  5. Determine the resonant frequency of an IMPATT diode having the following specifications:

    Carrier drift velocity: 2 × 107 cm/s

    Drift-region length: 5 μm

    Maximum operating voltage: 100 V

    Maximum operating current: 250 mA

    Efficiency: 20%

    Breakdown voltage: 90 V

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