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UGC NET 2015 Paper 3 Electronic Science Question Paper (27-Dec-2015); Download PDF

UGC NET 2015 Paper 3 Electronic Science Question Paper (27-Dec-2015) delivers a thorough evaluation of advanced communication theories and electronic measurements. The paper emphasizes complex logic design and the properties of materials used in electronic device fabrication as tested in late 2015.

Free
UGC NET 2015 Paper 3 Electronic Science Question Paper (27-Dec-2015)
150 Minutes
75 Questions
150 Marks
English
Showing 1 - 5 of 75 questions
Page 1 of 15

Q1.

For the n-channel MOSFET shown in the figure given below, threshold voltage Vth = 2 V. The drain current ID of the MOSFET is 4 mA when the drain resistance RD is 1 kΩ. If the value of RD is increased to 4 kΩ, then the drain current ID will become :

Q2.

In an npn diffused junction transistor, the p-type base region is formed on the n-type collector region through the process of :

Q3.

The average value of a periodic trapezoidal waveform is given by :

Q4.

The circuit shown below, will act as an ideal current source with respect to terminals A and B when frequency is :

Q5.

If a certain oscillator, Av = 50, the attenuation of the feedback circuit must be :

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Page 1 of 15
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