All Exams Test series for 1 year @ ₹349 only
Question

What is the pinch-off voltage in a FET?

This question was previously asked in
RRB NTPC 2024 Undergraduate CBT 1 Question Paper (29-Aug-2025) (Shift 1)
The correct answer is

The voltage at which the channel is "pinched off" and the current saturates

The pinch-off voltage in a Field Effect Transistor (FET) is the specific voltage at which the conductive channel between the source and drain is constricted or "pinched off", causing the current to reach a saturation point. Below is an explanation of this concept:

The channel in a FET is controlled by the gate-to-source voltage (VGS). As the gate-to-source voltage is made more negative in an n-channel JFET (or more positive in a p-channel), the electric field induced will narrow the channel width between the drain and source. Eventually, this effect will restrict the channel in such a way that any further increase in the drain-to-source voltage (VDS) will not increase the current flowing through the FET beyond a certain point. This voltage level is the pinch-off voltage (VP).

Mathematically, the pinch-off condition is represented by:

VDS ≥ VGS - VP

Where:

  • VDS is the drain-to-source voltage.
  • VGS is the gate-to-source voltage.
  • VP is the pinch-off voltage.

In practice, when VDS reaches a value that equals or exceeds VGS - VP, the channel is pinched off, and the drain current (ID) saturates at a constant level, known as the saturation current (IDSS).

Thus, the correct understanding of pinch-off voltage is: The voltage at which the channel is "pinched off" and the current saturates.

Was this answer helpful?

Similar Questions

  1. Field Effect transistor is:

  2. The gate current in an ideal FET is

  3. The region of operation in a FET where the drain current is independent of the drain voltage and only depends on the gate-to-source voltage is called the _______.


Important Questions from Field Effect Transistors

  1. Which of the following is the characteristic of Field-effect transistor?

  2. In junction field effect transistor, the drain current can be approximated as:
  3. The expression for the transconductance (g m) of a JFET is:

  4. Field Effect transistor is:

  5. A FET has

Need Expert Advice?
Upcoming Exams
RRB NTPC
September 27, 2026
Test Series
RRB ALP img
Railways
RRB ALP 2026 Mock Test series
1035 Tests 1 Tests Free
945 Attempts
4.3(237)
English, Hindi

Start Your Preparation with Prepp Mobile App

Download the app from Google Play & App Store
Download the app from Google Play & App Store
Prepp Mobile App