LIST-I LIST-II A. Shallow trench isolation (STI) I. Low static power dissipation B. Junction isolation II. High static power dissipation C. CMOS technology III. High component density D. Bipolar IC technology IV. Low component density
IC Technology Matching Solution
This question requires matching different integrated circuit (IC) fabrication and technology types with their key characteristics, specifically component density and static power dissipation.
Matching Process
Let's analyze each item in LIST-I and find its correct match in LIST-II:
- A. Shallow trench isolation (STI): STI is an advanced isolation technique that minimizes the area occupied by isolation structures, enabling high component density. It's widely used in modern ICs. Thus, A matches with III.
- B. Junction isolation: This older isolation method uses PN junctions and typically requires larger spacing between devices compared to STI, resulting in lower component density. Thus, B matches with IV.
- C. CMOS technology: CMOS technology is renowned for its extremely low static power dissipation because current only flows significantly during switching. Thus, C matches with I.
- D. Bipolar IC technology: Technologies like TTL and ECL, which are bipolar, often exhibit higher static power consumption than CMOS, especially in certain states. Thus, D matches with II.
Summary of Matches
The correct matching based on the analysis is:
| LIST-I Item | LIST-II Match | Characteristic |
| A. STI | III | High component density |
| B. Junction isolation | IV | Low component density |
| C. CMOS technology | I | Low static power dissipation |
| D. Bipolar IC technology | II | High static power dissipation |
Therefore, the correct option is A-III, B-IV, C-I, D-II.
Important Questions from Semiconductor Process Flow
A. For impurity diffusion in semiconductor, concentration gradient is the only essential requirement.
B. Annealing is a mandatory step after ion-implantation.
C. Wet etching is normally anisotropic
D. High temperature is required for the growth of $SiO_2$ because oxidation reaction takes place at high temperature
E. Bird's beak formation is a characteristic of LOCOS isolation
Choose the correct answer from the options given below:
Arrange the given process steps in sequence for self-aligned gate formation.
A. Thermal oxidation to grow gate oxide.
B. Polysilicon deposition
C. Photolithography using gate mask
D. Etching of polysilicon and oxide
E. Source/drain diffusion
Choose the correct answer from the options given below:
Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R
Assertion A: Impurity diffusion in semiconductor essentially needs very high temperature.
Reason R: Diffusivity of impurity atoms is negligibly small at room temperature.
In the light of the above statements, choose the most appropriate answer from the options given below
- In particle beam lithography, the resolution depends upon :
When silicon dioxide of thickness d is grown, the Silicon consumed is :
