Match the following lists : Correct codes are :List – I List – II a. Abrupt p-n junction i. p+ n+ b. Linearly graded p-n junction ii. p+ n n+ c. Tunnel diode iii. p π(ν) n d. p-i-n diode iv. p+ p n n+
a-ii, b-iv, c-i, d-iii
To solve this problem, we need to match the types of p-n junctions listed in List – I with their corresponding configurations in List – II.
- Abrupt p-n junction: An abrupt p-n junction has a sudden change in doping concentration at the junction. The configuration that matches this is
p+, n, n+, as it represents a sharp transition between regions of different doping levels. Therefore, the correct match is a-ii. - Linearly graded p-n junction: A linearly graded junction has a gradual change in doping concentration across the junction, often represented by the profile
p+, p, n, n+. This corresponds to configuration iv. Therefore, the correct match is b-iv. - Tunnel diode: A tunnel diode is characterized by a highly doped p-n junction, typically denoted by
p+, n+. This high doping leads to quantum mechanical tunneling. Hence, the configuration i matches this. So, the correct match is c-i. - p-i-n diode: A p-i-n diode includes an intrinsic (or undoped) layer between the p and n regions. This is denoted by
p, π(ν), n. The corresponding configuration is iii. Therefore, the correct match is d-iii.
Based on the above reasoning, the correct code matching List – I to List – II is: a-ii, b-iv, c-i, d-iii.
Similar Questions
In a p-n junction diode
1. In reverse bias mode the bulk resistance is dominant.
2. The junction impedance is variable.In a pn junction diode, depletion layer is formed due to
In a MOS transistor, if n+ region is diffused in p-type substrate, the type of pn junction generated towards channel and drain is:
Consider the following statements for a p-n junction diode :
(a) It is an active component
(b) Depletion layer width decreases with forward biasing
(c) In the reverse bias case, saturation current increases with increasing temperatureWhich of the statements given above are correct ?
Match the following lists :
List – I List – II a. Junction deptd i. \(N_Ax_1=N_Dx_2\) b. Junction built in voltage ii. \(\sqrt{\dfrac{2\epsilon_{si}}{qN_A}\phi_o}\) c. Charge neutrality condition iii. \(\dfrac{kT}{q}\ln\left(\dfrac{N_AN_D}{n_i^{2}}\right)\) d. Law of mass action iv. \(n\cdot p=n_i^{2}\)
Important Questions from PN Junction
Diode junction breakdowns above 5 V are caused by:
The leakage current in a pn junction is of the order of:
For a PN junction, we have
A. Width of depletion layer
B. Junction barrier voltage
C. Reverse leakage current
Which of the above parameters will decrease when the temperature of the junction rises?
The depletion region consists of:
In the P-N junction, the barrier voltage
