Match the following lists : Correct codes are :List – I List – II a. Abrupt p-n junction i. p+ n+ b. Linearly graded p-n junction ii. p+ n n+ c. Tunnel diode iii. p π(ν) n d. p-i-n diode iv. p+ p n n+
a-ii, b-iv, c-i, d-iii
To solve this problem, we need to match the types of p-n junctions listed in List – I with their corresponding configurations in List – II.
- Abrupt p-n junction: An abrupt p-n junction has a sudden change in doping concentration at the junction. The configuration that matches this is
p+, n, n+, as it represents a sharp transition between regions of different doping levels. Therefore, the correct match is a-ii. - Linearly graded p-n junction: A linearly graded junction has a gradual change in doping concentration across the junction, often represented by the profile
p+, p, n, n+. This corresponds to configuration iv. Therefore, the correct match is b-iv. - Tunnel diode: A tunnel diode is characterized by a highly doped p-n junction, typically denoted by
p+, n+. This high doping leads to quantum mechanical tunneling. Hence, the configuration i matches this. So, the correct match is c-i. - p-i-n diode: A p-i-n diode includes an intrinsic (or undoped) layer between the p and n regions. This is denoted by
p, π(ν), n. The corresponding configuration is iii. Therefore, the correct match is d-iii.
Based on the above reasoning, the correct code matching List – I to List – II is: a-ii, b-iv, c-i, d-iii.
Similar Questions
In a p-n junction diode
1. In reverse bias mode the bulk resistance is dominant.
2. The junction impedance is variable.In a MOS transistor, if n+ region is diffused in p-type substrate, the type of pn junction generated towards channel and drain is:
Consider the following statements for a p-n junction diode :
(a) It is an active component
(b) Depletion layer width decreases with forward biasing
(c) In the reverse bias case, saturation current increases with increasing temperatureWhich of the statements given above are correct ?
Match the following lists :
List – I List – II a. Junction deptd i. \(N_Ax_1=N_Dx_2\) b. Junction built in voltage ii. \(\sqrt{\dfrac{2\epsilon_{si}}{qN_A}\phi_o}\) c. Charge neutrality condition iii. \(\dfrac{kT}{q}\ln\left(\dfrac{N_AN_D}{n_i^{2}}\right)\) d. Law of mass action iv. \(n\cdot p=n_i^{2}\) In a pn junction diode, depletion layer is formed due to
Important Questions from PN Junction
In a p-n junction diode
1. In reverse bias mode the bulk resistance is dominant.
2. The junction impedance is variable.In a MOS transistor, if n+ region is diffused in p-type substrate, the type of pn junction generated towards channel and drain is:
Consider the following statements for a p-n junction diode :
(a) It is an active component
(b) Depletion layer width decreases with forward biasing
(c) In the reverse bias case, saturation current increases with increasing temperatureWhich of the statements given above are correct ?
At room temperature, the region in a PN junction diode where there are no mobile electrons or holes is called __________________.
Under forward-bias conditions, what is the primary mechanism that creates forward current across a PN junction?
