If a JFET is operating in the ohmic region, how does its behavior compare to its operation in the saturation region?
It acts as a voltage-controlled resistor in the ohmic region
In the ohmic region (VDS small, below pinch-off), the channel is fully formed and the drain current varies almost linearly with VDS, so the JFET behaves like a resistor.
The width of the channel, and hence its resistance, is controlled by the gate–source voltage VGS. A more negative VGS widens the depletion regions and raises the channel resistance — so the JFET acts as a voltage-controlled resistor.
In the saturation (pinch-off) region, by contrast, ID becomes nearly independent of VDS, so the JFET behaves as a constant-current source and is used for amplification.
The other options fail: amplification and constant-current behaviour belong to the saturation region, not the ohmic region; and the device is off only in the cut-off region (VGS beyond VGS(off)), not in the ohmic region.
Hence, the answer is It acts as a voltage-controlled resistor in the ohmic region.
Similar Questions
Which parameter primarily determines the maximum possible drain current (IDSS) in a JFET’s transfer characteristic?
Important Questions from Types of FET
The transconductance g mof a JFET is equal to:
\(\frac{ I _{ DSS }}{ V _{ P }}\left(1-\frac{ V _{ GS }}{ V _{ P }}\right)\)
The CMOS inverter can be used as an amplifier when:
Which of the following is NOT a minority carrier semiconductor device ?
The metal gate that is insulated from the channel is also referred to as:
If the output of a CMOS inverter gets accidently shorted to ground
