If the forward voltage in a p-n junction diode is increased, the width of the depletion region:
Decreases
In a p-n junction diode, the depletion region is formed due to the diffusion of charge carriers, creating an electric field.
- In forward bias, applying a positive voltage reduces the built-in potential, allowing more charge carriers to flow.
- As a result, the depletion width decreases because the external voltage reduces the barrier for charge movement.
Thus, the correct answer is (b).
Important Questions from Semiconductor and Electronic Devices
Two identical thin metal plates are given charges q1 and q2 (q2 < q1) respectively. If they are now brought close together to form a parallel plate capacitor with a capacitance 'C', then the potential difference between the plates is:
Displacement current (id) = ω0 dΦE / dt. Where symbols have their usual meanings. Which of the following options gives correct equation for displacement current?
A Zener diode is used in a voltage regulator circuit as shown below. Its breakdown voltage is 15 V. What is the current flowing through the Zener diode?
Choose the correct experimental circuit arrangement for studying V-I characteristics of a p-n junction diode in forward bias:
During the p-n junction formation, when an electron diffuses from n → p, it leaves behind an:
