This problem concerns the electrical properties of a simplified one-dimensional (1D) crystal at absolute zero temperature (0 K). The crystal is non-magnetic, has one atom per unit cell, and its valence electrons exhibit independent behavior and weak interaction with the ionic lattice. We need to determine the condition under which the crystal behaves metallically based on the number of valence electrons per unit cell, denoted by $n$. The behavior depends crucially on how the available energy bands are filled.
In a 1D crystal with a periodic potential, energy bands are formed. The interaction with the ions, even if weak, creates small energy gaps at the boundaries of the Brillouin zone (specifically at $k = \pm \pi/a$, where $a$ is the lattice constant). A single energy band can accommodate a maximum of two electrons per unit cell, one for each spin state (spin up and spin down).
A crystal is considered:
We analyze the filling of energy bands based on the number of valence electrons per unit cell, $n$. Since each band can hold 2 electrons per unit cell:
Based on the band filling analysis at 0 K:
Therefore, the condition for the crystal to be metallic is that $n$ must be odd.
The dispersion ($E(k)$) of the conduction band (CB) and valence band (VB) for a semiconductor are shown schematically in the figure. Considering the possibility of an electron making a transition from the bottom of the CB to the top of the VB, which of the following options is/are correct?
For nonrelativistic electrons in a solid, different energy dispersion relations (with effective masses $m_a^*$, $m_b^*$, and $m_c^*$) are schematically shown in the plots. Which one of the following options is CORRECT?
The temperature dependence of the electrical conductivity ($\sigma$) of three intrinsic semiconductors A, B and C is shown in figure. 
Let $E_A$, $E_B$ and $E_C$ be the bandgaps of A, B and C, respectively. Which one of the following relations is correct?