Consider a one-dimensional lattice with a weak periodic potential $U(x) = U_0 \cos( \frac{2\pi x}{a})$. The gap at the edge of the Brillouin zone $(k = \frac{\pi}{a})$ is:
The energy gap in a crystal lattice arises due to the periodic potential. For a one-dimensional lattice with potential $U(x)$, the energy gap at the Brillouin zone boundary $k = \frac{\pi}{a}$ is related to the Fourier components of the potential.
The given potential is $U(x) = U_0 \cos\left( \frac{2\pi x}{a} \right)$.
The size of the energy gap ($\Delta E$) at the edge of the Brillouin zone ($k = \frac{\pi}{a}$) is given by twice the magnitude of the corresponding Fourier coefficient of the potential.
Therefore, the gap at the edge of the Brillouin zone is $U_0$.
The dispersion ($E(k)$) of the conduction band (CB) and valence band (VB) for a semiconductor are shown schematically in the figure. Considering the possibility of an electron making a transition from the bottom of the CB to the top of the VB, which of the following options is/are correct?
For nonrelativistic electrons in a solid, different energy dispersion relations (with effective masses $m_a^*$, $m_b^*$, and $m_c^*$) are schematically shown in the plots. Which one of the following options is CORRECT?
The temperature dependence of the electrical conductivity ($\sigma$) of three intrinsic semiconductors A, B and C is shown in figure. 
Let $E_A$, $E_B$ and $E_C$ be the bandgaps of A, B and C, respectively. Which one of the following relations is correct?