In a semiconductor crystal, the total number of electrons in the outer shell is 4N. At absolute zero, the number of energy states of valence and conduction band are respectively
4N and 4N
For N atoms of Si or Ge, the outer s and p levels give 2N + 6N = 8N available energy states in all.
These split into a valence band of 4N states and a conduction band of 4N states.
At absolute zero the 4N valence electrons completely fill the 4N valence states and the 4N conduction states stay empty, but the number of states in each band is 4N.
Hence, 4N and 4N.
In the nuclear process, \({}_{11}^{22}Na \rightarrow {}_{10}^{22}Ne + e^{+} + X\), then \(X\) is
The angular momentum of the electron revolving in 2nd orbit is
If a particle is moving with a momentum of \((2\times10^{10})h\) kg m s-1 then the de Broglie wavelength associated with it (in angstrom) is (where h is Planck’s constant)
Energy equivalent of mass 0.5 kg is
The donor level in an \(n\)-type semiconductor lies
In a Germanium crystal containing N atoms, the total number of outer electrons in the crystal is
If a radioactive element disintegrates for a period of time equal to its mean life, then the fraction of the original amount remaining undisintegrated is
In the following nuclear reaction, Z is a/an
\({}_{80}^{197}X \rightarrow {}_{79}^{197}Y + Z + v\)
The ratio of the respective de Broglie wavelengths of two particles with kinetic energy of 0.02 eV and 2 eV, respectively, is
The plot of maximum kinetic energy of photo-electrons to the energy of the incident photon above its threshold frequency on a photo-sensitive material of work function \(\varphi\) is