In a pure silicon, what is the time for an electron to drift $1\mu m$ in an electric field of 100 V/cm? Assume electron mobility of $1350 \text{ cm}^2/V-s$
To find the time an electron takes to drift across a distance under an electric field, we use the concepts of drift velocity and mobility.
The drift velocity ($v_d$) of an electron in a semiconductor is directly proportional to the applied electric field ($E$) and the electron mobility ($\mu_n$). The formula is:
$v_d = \mu_n E$
Drift time ($t$) is the time taken to travel a distance ($d$) at the drift velocity ($v_d$). The relationship is:
$t = \frac{d}{v_d}$
First, ensure all units are consistent. We need to convert the drift distance to centimeters to match the mobility units.
Substitute the given values into the drift velocity formula:
$v_d = (1350 \text{ cm}^2/V-s) \times (100 \text{ V/cm})$
$v_d = 135000 \text{ cm/s}$
Now, use the drift velocity and distance to find the time:
$t = \frac{d}{v_d} = \frac{1 \times 10^{-4} \text{ cm}}{135000 \text{ cm/s}}$
$t = \frac{10^{-4}}{1.35 \times 10^5} \text{ s}$
$t \approx 0.7407 \times 10^{-9} \text{ s}$
Converting this to nanoseconds (ns), where $1 \text{ ns} = 10^{-9} \text{ s}$:
$t \approx 0.74 \text{ ns}$
The calculated drift time is approximately $0.74$ ns, which matches Option A.
The velocity with which electrons are emitted in the photoemission process
The process of adding impurities to a pure semiconductor is called
Mobility and conductivity are related by which of the following equations?
How many electrons are there in the valence shell of a pure semiconductor?
Match the LIST-I with LIST-II
| LIST-I | LIST-II |
| A. Einstein relation | I. ${qD_n} \frac{dn}{dx}$ |
| B. Diffusion length of electron | II. $\sqrt{D_n \tau_n}$ |
| C. Electron diffusion current density | III. $\frac{D_n}{\mu_n} = \frac{KT}{q}$ |
| D. Electron Drift velocity | IV. $\mu_n E$ |
Choose the correct answer from the options given below: