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Question

In a pure silicon, what is the time for an electron to drift $1\mu m$ in an electric field of 100 V/cm? 

Assume electron mobility of $1350 \text{ cm}^2/V-s$

The correct answer is
0.74 ns

Silicon Electron Drift Time Calculation

To find the time an electron takes to drift across a distance under an electric field, we use the concepts of drift velocity and mobility.

Drift Velocity Calculation

The drift velocity ($v_d$) of an electron in a semiconductor is directly proportional to the applied electric field ($E$) and the electron mobility ($\mu_n$). The formula is:

$v_d = \mu_n E$

Drift Time Determination

Drift time ($t$) is the time taken to travel a distance ($d$) at the drift velocity ($v_d$). The relationship is:

$t = \frac{d}{v_d}$

Step-by-Step Calculation

First, ensure all units are consistent. We need to convert the drift distance to centimeters to match the mobility units.

  • Given values:
    • Drift Distance, $d = 1 \mu m = 1 \times 10^{-6}$ m $= 1 \times 10^{-4}$ cm
    • Electric Field, $E = 100$ V/cm
    • Electron Mobility, $\mu_n = 1350 \text{ cm}^2/V-s$
  • Calculate Drift Velocity ($v_d$):

    Substitute the given values into the drift velocity formula:

    $v_d = (1350 \text{ cm}^2/V-s) \times (100 \text{ V/cm})$

    $v_d = 135000 \text{ cm/s}$

  • Calculate Drift Time ($t$):

    Now, use the drift velocity and distance to find the time:

    $t = \frac{d}{v_d} = \frac{1 \times 10^{-4} \text{ cm}}{135000 \text{ cm/s}}$

    $t = \frac{10^{-4}}{1.35 \times 10^5} \text{ s}$

    $t \approx 0.7407 \times 10^{-9} \text{ s}$

    Converting this to nanoseconds (ns), where $1 \text{ ns} = 10^{-9} \text{ s}$:

    $t \approx 0.74 \text{ ns}$

Conclusion

The calculated drift time is approximately $0.74$ ns, which matches Option A.

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Important Questions from Carriers in Semiconductors

  1. The velocity with which electrons are emitted in the photoemission process

  2. The process of adding impurities to a pure semiconductor is called

  3. Mobility and conductivity are related by which of the following equations?

  4. How many electrons are there in the valence shell of a pure semiconductor?

  5. Match the LIST-I with LIST-II

    LIST-ILIST-II
    A. Einstein relationI. ${qD_n} \frac{dn}{dx}$
    B. Diffusion length of electronII. $\sqrt{D_n \tau_n}$
    C. Electron diffusion current densityIII. $\frac{D_n}{\mu_n} = \frac{KT}{q}$
    D. Electron Drift velocityIV. $\mu_n E$

    Choose the correct answer from the options given below:

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