How many electrons are there in the valence shell of a pure semiconductor?
4
A semiconductor is a material whose electrical conductivity is between that of a conductor and an insulator. The behavior of semiconductors, especially in their pure form, is dictated by the electrons residing in their outermost energy level, referred to as the valence shell.
The valence shell holds the valence electrons, which are the electrons available for chemical bonding. The number of these electrons determines how atoms interact and influences the material's electrical conductivity.
Typical pure semiconductors, such as Silicon (Si) and Germanium (Ge), are found in Group 14 of the periodic table. A key characteristic of elements in Group 14 is that they possess exactly four valence electrons. For instance, Silicon, with atomic number 14, has an electronic configuration of $2, 8, 4$. The final digit, '4', signifies the count of electrons in its outermost, or valence, shell.
Within a pure semiconductor crystal lattice, each atom establishes covalent bonds with four adjacent atoms. Each of these bonds is formed by sharing a pair of electrons, with one electron contributed by each bonded atom. Since every atom has four valence electrons, it participates in four such covalent bonds. This creates a stable structure where each atom effectively experiences a full outer shell, contributing to the semiconductor's intrinsic properties.
Consequently, the number of electrons present in the valence shell of an atom within a pure semiconductor is consistently 4.
The velocity with which electrons are emitted in the photoemission process
The process of adding impurities to a pure semiconductor is called
Mobility and conductivity are related by which of the following equations?
In a pure silicon, what is the time for an electron to drift $1\mu m$ in an electric field of 100 V/cm?
Assume electron mobility of $1350 \text{ cm}^2/V-s$
Match the LIST-I with LIST-II
| LIST-I | LIST-II |
| A. Einstein relation | I. ${qD_n} \frac{dn}{dx}$ |
| B. Diffusion length of electron | II. $\sqrt{D_n \tau_n}$ |
| C. Electron diffusion current density | III. $\frac{D_n}{\mu_n} = \frac{KT}{q}$ |
| D. Electron Drift velocity | IV. $\mu_n E$ |
Choose the correct answer from the options given below: