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Question

Which statement is correct?

The correct answer is

BJT is current controlled and MOSFET is voltage controlled device

Transistor Control Mechanisms: BJT vs. MOSFET

Transistors are fundamental building blocks in modern electronics, used for switching or amplifying electronic signals and electrical power. There are two main types of transistors often discussed: Bipolar Junction Transistors (BJTs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). A key difference between these two types lies in how their output current is controlled.

BJT: Current Controlled Transistor

A Bipolar Junction Transistor (BJT) is a current-controlled device. This means that a small amount of current flowing into its base terminal controls a much larger current flowing between its collector and emitter terminals.

  • Control Mechanism: The collector current (<math>I_C</math>) is directly proportional to the base current (<math>I_B</math>) through a factor called the current gain (<math>\beta</math> or <math>h_{FE}</math>). The relationship is often expressed as <math>I_C = \beta I_B</math>.
  • Input Impedance: BJTs generally have a lower input impedance because they require a base current to operate.
  • Terminals: Base, Collector, Emitter.

MOSFET: Voltage Controlled Transistor

A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a voltage-controlled device. In contrast to BJTs, MOSFETs use an electric field generated by a voltage applied to their gate terminal to control the current flow between their drain and source terminals.

  • Control Mechanism: The drain current (<math>I_D</math>) is controlled by the voltage applied between the gate and source terminals (<math>V_{GS}</math>). A change in <math>V_{GS}</math> modulates the conductivity of the channel, thereby controlling <math>I_D</math>.
  • Input Impedance: MOSFETs have an extremely high input impedance (almost infinite) because the gate is insulated from the channel by a thin oxide layer, meaning virtually no current flows into the gate terminal.
  • Terminals: Gate, Drain, Source.

BJT vs. MOSFET: Key Differences

Here's a comparison highlighting the primary differences between BJT and MOSFET devices:

Feature BJT (Bipolar Junction Transistor) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Control Type Current-controlled device Voltage-controlled device
Input Terminal Base (current input) Gate (voltage input)
Input Impedance Relatively low Extremely high
Output Current Collector current (<math>I_C</math>) Drain current (<math>I_D</math>)
Fabrication Complexity Simpler More complex for high-power applications due to oxide layer
Switching Speed Generally slower for high power Generally faster, especially for high frequencies

Analyzing the Statements

Let's evaluate each given statement based on our understanding of BJT and MOSFET control mechanisms:

  • Statement 1: "BJT and MOSFET are current controlled devices"
    • This statement is incorrect. While BJT is current controlled, MOSFET is voltage controlled.
  • Statement 2: "BJT is voltage controlled and MOSFET is current controlled device"
    • This statement is incorrect. It reverses the control mechanisms of both devices. BJT is current controlled, and MOSFET is voltage controlled.
  • Statement 3: "BJT and MOSFET are voltage controlled devices"
    • This statement is incorrect. Only MOSFET is voltage controlled; BJT is current controlled.
  • Statement 4: "BJT is current controlled and MOSFET is voltage controlled device"
    • This statement is correct. As discussed, a BJT's output current is controlled by its base current (current controlled), and a MOSFET's output current is controlled by its gate-source voltage (voltage controlled).

Therefore, the statement that accurately describes the control mechanism for both BJT and MOSFET is that BJT is current controlled and MOSFET is voltage controlled.

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Important Questions from MOSFET

  1. Which industry does aluminium smelting belong to?

  2. Given, Vgs is the gate-source voltage, Vds is the drain source voltage, and Vth is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are

  3. A switched mode power supply operating at 20 kHz to 100 kHz range uses as the main switching element is __________.

  4. Which semiconductor power device out of the following, is not a current triggering device?

  5. A CMOS amplifier when compared to an N–channel MOSFET, has the advantage of

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