What happens to a diode, if the PIV rating of the diode is exceeded?
A diode is a two-terminal electronic component that largely conducts current in one direction only. It allows current to flow easily in the forward-bias direction (when the anode is positive with respect to the cathode) but blocks current flow in the reverse-bias direction (when the cathode is positive with respect to the anode).
The term Peak Inverse Voltage (PIV) is a critical parameter for a diode. It refers to the maximum voltage that a diode can withstand in the reverse-bias direction without undergoing electrical breakdown. In simpler terms, it's the highest voltage that can be applied across the diode in the direction that normally blocks current, without causing damage.
If the reverse voltage applied across a standard diode exceeds its PIV rating, a phenomenon called avalanche breakdown occurs. In this condition:
This sudden surge of reverse current, often in the order of amperes, is not limited by the diode's internal resistance and leads to significant power dissipation within the diode. The power dissipated \(P\) can be expressed as:
\[ P = V_{R} \times I_{R} \]
where \(V_{R}\) is the reverse voltage and \(I_{R}\) is the reverse current. When \(V_{R}\) exceeds the PIV and \(I_{R}\) increases drastically, the dissipated power becomes very high.
This excessive power dissipation generates a large amount of heat. Since standard rectifier diodes are not designed to operate in this breakdown region (unlike Zener diodes), this extreme heat quickly damages the semiconductor material and the internal structure of the diode. The high temperature can melt the semiconductor material or its bonding wires, leading to a permanent short circuit or open circuit within the device. Consequently, the diode gets destroyed and becomes non-functional.
Therefore, for a standard diode, exceeding its PIV rating results in its permanent destruction due to thermal runaway caused by excessive reverse current.
The electronic circuit that converts AC to DC where the DC output peak value can be greater than the AC input peak value is -
Which of the following statements are correct?
A. Schottky barriers are established by depositing a metal, such as Tungsten, on a p‐type channel.
B. The transfer characteristics of a depletion type MESFET are similar to those of a depletion type MOSFET.
C. Maximum operating conditions are determined by the product of drain‐to‐source voltage and drain current.
D. A complimentary MOSFET has negligibly small input impedance.
Choose the correct answer from the options given below:
Arrange the following in descending order of their switching times:
(A) Schottky diodes
(B) Power transistor (Darlington)
(C) IGBT
(D) Trine
Choose the correct answer from the options given below:
Arrange the following in decreasing order of the noise generated by them:
(A) Diode
(B) Transistor
(C) Avalanche photo diode
(D) FET
Choose the correct answer from the options given below: