Which of the following is NOT p-type impurity?
Arsenic
Semiconductors like Silicon (Si) or Germanium (Ge) are often doped with specific impurities to enhance their electrical conductivity. This process is called doping. Doping creates either p-type or n-type semiconductors.
p-type impurities are elements that have fewer valence electrons than the semiconductor material. Typically, silicon and germanium are in Group 14 and have 4 valence electrons. Impurities from Group 13, which have 3 valence electrons, are called p-type impurities. When added to silicon, these impurities create 'holes' (vacancies where an electron should be), leading to a higher conductivity due to the movement of these positive charge carriers.
n-type impurities are elements that have more valence electrons than the semiconductor material. Impurities from Group 15, which have 5 valence electrons, are called n-type impurities. When added to silicon, these impurities introduce extra free electrons, increasing conductivity due to negative charge carriers.
Let's examine each option based on its position in the periodic table and number of valence electrons:
The question asks to identify the element that is NOT a p-type impurity. Based on the analysis, Indium, Boron, and Aluminium are all p-type impurities because they belong to Group 13 and have 3 valence electrons. Arsenic, belonging to Group 15 with 5 valence electrons, is an n-type impurity.
Therefore, Arsenic is the correct choice as it is not a p-type impurity.
The electronic circuit that converts AC to DC where the DC output peak value can be greater than the AC input peak value is -
Which of the following statements are correct?
A. Schottky barriers are established by depositing a metal, such as Tungsten, on a p‐type channel.
B. The transfer characteristics of a depletion type MESFET are similar to those of a depletion type MOSFET.
C. Maximum operating conditions are determined by the product of drain‐to‐source voltage and drain current.
D. A complimentary MOSFET has negligibly small input impedance.
Choose the correct answer from the options given below:
Arrange the following in descending order of their switching times:
(A) Schottky diodes
(B) Power transistor (Darlington)
(C) IGBT
(D) Trine
Choose the correct answer from the options given below:
Arrange the following in decreasing order of the noise generated by them:
(A) Diode
(B) Transistor
(C) Avalanche photo diode
(D) FET
Choose the correct answer from the options given below: