In a PN junction, with no external voltage, the electric field between the acceptor and the donor ions is called as
Barrier
When a semiconductor device has a junction between a P-type material and an N-type material, it forms a PN junction. In P-type material, the majority charge carriers are holes, and it has negatively charged acceptor ions fixed in the crystal lattice. In N-type material, the majority charge carriers are electrons, and it has positively charged donor ions fixed in the crystal lattice.
When the P and N regions are joined, diffusion occurs. Electrons from the N-side diffuse to the P-side, and holes from the P-side diffuse to the N-side.
This creates a region near the junction depleted of free charge carriers, known as the depletion region. Within this region, there's a concentration of fixed positive ions (donor ions) on the N-side and fixed negative ions (acceptor ions) on the P-side.
The separation of these fixed positive and negative charges creates an internal electric field across the depletion region. This electric field points from the positive ions (N-side) to the negative ions (P-side), opposing further diffusion of majority carriers. This intrinsic electric field is referred to as the barrier field or potential barrier.
The function of this barrier field is to prevent the continuous flow of charge carriers across the junction once equilibrium is reached, in the absence of any external voltage.
Let's look at why 'Barrier' is the correct term:
Therefore, the electric field between the acceptor and donor ions in a PN junction with no external voltage is called the barrier field.
The forward biased diode current is:
Which of the following is a characteristic of a reverse-biased p-n junction?
For every 10°C increase in temperature, the reverse saturation current of a p-n junction will be increased by
For an ideal diode, the ideality factor is
The p-n junction diode has