M1, M2 and M3 in the circuit shown below are matched N-channel enhancement mode MOSFETS operating in saturation mode, forward voltage drop of each diode is $0.7 V$, reverse leakage current of each diode is negligible and the opamp is ideal.
To determine the output voltage \( V_O \) for the given circuit with matched N-channel enhancement mode MOSFETs (M1, M2, and M3), we follow these steps:
Thus, the output voltage \( V_O \) is correctly computed as \( 1.2 \, \text{V} \).
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Given, Vgs is the gate-source voltage, Vds is the drain source voltage, and Vth is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are
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A CMOS amplifier when compared to an N–channel MOSFET, has the advantage of