All Exams Test series for 1 year @ ₹349 only
Question

Consider the following statements regarding MOSFETS/VMOS FETs :

1. Compared with commercially available planar MOSFETS, VMOS FETs (Vertical Metal-Oxide-Silicon FETs) have reduced channel resistance levels and higher current and power ratings.

2. VMOS FETs have a negative temperature coefficient that will combat the possibility of thermal runaway.

3. The reduced charge storage levels result in faster switching times for VMOS construction compared to those for conventional planar construction.

Which of the above statements are correct?

The correct answer is
1 and 3 only

VMOS FET vs Planar MOSFET Statements Analysis

This solution analyzes the correctness of statements comparing VMOS FETs (Vertical Metal-Oxide-Silicon FETs) with conventional planar MOSFETs.

Statement 1 Evaluation: VMOS FET Advantages

Statement 1 claims VMOS FETs have reduced channel resistance and higher current/power ratings compared to planar MOSFETs. The vertical structure of VMOS allows for a higher density of conductive channels per unit area. This configuration reduces the overall ON-resistance ($R_{DS(on)}$) and enables the device to handle larger currents and dissipate more power. Therefore, Statement 1 is correct.

Statement 2 Evaluation: VMOS FET Temperature Coefficient

Statement 2 suggests VMOS FETs have a negative temperature coefficient to prevent thermal runaway. However, MOSFETs, including VMOS types, generally exhibit a positive temperature coefficient for drain current. As temperature increases, their resistance tends to increase, potentially leading to thermal runaway if not properly managed. A negative temperature coefficient is typically associated with bipolar devices. Thus, Statement 2 is incorrect.

Statement 3 Evaluation: VMOS FET Switching Speed

Statement 3 states that reduced charge storage in VMOS construction results in faster switching times compared to conventional planar construction. The design of VMOS FETs often minimizes parasitic capacitances and charge storage effects, which are crucial factors limiting switching speed. This optimization allows for quicker transitions between ON and OFF states. Therefore, Statement 3 is correct.

Conclusion on Correct Statements

Based on the analysis:

  • Statement 1 is correct.
  • Statement 2 is incorrect.
  • Statement 3 is correct.

The statements that are correct are 1 and 3.

Final Answer Determination

The option that includes only the correct statements (1 and 3) is Option B.

Was this answer helpful?

Important Questions from MOSFET

  1. Which industry does aluminium smelting belong to?

  2. Given, Vgs is the gate-source voltage, Vds is the drain source voltage, and Vth is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are

  3. A switched mode power supply operating at 20 kHz to 100 kHz range uses as the main switching element is __________.

  4. Which semiconductor power device out of the following, is not a current triggering device?

  5. A CMOS amplifier when compared to an N–channel MOSFET, has the advantage of

Need Expert Advice?

Start Your Preparation with Prepp Mobile App

Download the app from Google Play & App Store
Download the app from Google Play & App Store
Prepp Mobile App