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Question

Which type of device is JFET?

The correct answer is

Voltage controlled device

JFET Operation Explained

A JFET, short for Junction Field-Effect Transistor, is a type of transistor widely used in electronic circuits. To understand its classification, we need to look at how it operates.

Why JFET is Classified as Voltage Controlled

The core principle behind a JFET is that the flow of current through its main channel (between the drain and source terminals) is regulated by the voltage applied to the gate terminal.

Specifically, the voltage applied between the gate and source, represented mathematically as $V_{GS}$, creates an electric field. This field affects the channel's width by forming a depletion region. As the $V_{GS}$ changes, the channel's width modulates, which in turn controls the resistance of the channel and thus the amount of current ($I_D$) that can flow from the drain to the source.

Since it's the voltage applied to the gate that controls the output current, the JFET is categorized as a voltage controlled device.

Device Control Mechanisms Compared

It is useful to compare this with other semiconductor devices:

  • Voltage Controlled Devices (like JFETs): The output current or voltage is controlled by an input voltage. For a JFET, the gate-source voltage ($V_{GS}$) controls the drain current ($I_D$).
  • Current Controlled Devices (like BJTs): The output current or voltage is controlled by an input current. For a BJT, the base current ($I_B$) controls the collector current ($I_C$).

The fundamental difference lies in whether the control input is a voltage or a current.

Final Classification of JFET

Based on its operational mechanism, where the input gate-source voltage ($V_{GS}$) dictates the drain current ($I_D$), the JFET is definitively a voltage controlled device.

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Important Questions from Types of FET

  1. A JFET is also called ________ device.

  2. In JFET, the Pinch‐off Voltage can be defined as:

  3. In JFET, the current density in the x-direction is:

    A. σ(x)E x

    B. qN DμE x

    C. \(\rm \frac{q}{2 \in_s}N_D\mu\)

    D.  \(\rm \frac{N_D\mu}{2 \in_s}\)

    Choose the correct answer from the options given below:

  4. The pull up to pull down ratio for an n mos inverter driven by another n mos inverter can be evaluated from:

    (A) Vi nv  = V t  −  \(\rm\frac{V_{t d}}{\sqrt{Zpu/Zpd}}\)

    (B) V inv  =  \(\rm\frac{−V_{t d}}{\sqrt{Zpu/Zpd}}\)

    (C) \(\rm\frac{W_{pd}}{L_{pd}}\) (V inv  − V t) 2= \(\rm\frac{W_{p u}}{L_{p u}}\) (−V td )2

    (D) \(\rm\frac{W_{p d}}{L_{p d}}\) (V inv  − V t ) = \(\rm\frac{W_{p u}}{L_{pu}}\) (−V td )2

    Choose the correct answer from the options given below:

  5. The layers of Nos involves a subset of layers. For NMOS we require:

    (A) Contact, (Black or Brown)

    (B) Polysilicon (Green)

    (C) Metal (Blue)

    (D) Implant (Yellow)

    Choose the correct answer from the options given below:

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