| Material Type | Specific Material | Typical Max Efficiency (%) |
|---|---|---|
| Thin Film | CdTe | Approximately 20% |
| Crystalline Silicon | Polycrystalline Si | Approximately 22% |
| Amorphous Film | Amorphous Si:Ge:H | Less than 10% |
| Single Crystal | GaAs (Gallium Arsenide) | Greater than 29% (Lab record) |
| LIST-I | LIST-II |
| A. BJT | I. Five layers and four junction device |
| B. MOSFET | II. Power switching device with fast acting features and high power capability with voltage control features |
| C. IGBT | III. Voltage controlled device |
| D. DIAC | IV. Current controlled device |
The common drain circuit has a FET with $Y_{fs}$=3000 µS, $R_{gs}$=100 MΩ and $r_d$=50 KΩ. Determine the device input impedance. 