Which of the following diodes is a four-layer diode?
This question asks to identify which of the listed diode types is specifically known as a four-layer diode. A four-layer diode is a type of semiconductor device characterized by its specific internal structure and switching behavior.
A four-layer diode possesses a semiconductor structure consisting of four alternating layers, typically arranged in a P-N-P-N sequence. This unique structure allows it to exhibit a switching characteristic. It normally remains in an OFF state (high resistance) until the voltage across it reaches a certain threshold, known as the breakover voltage. Upon reaching this voltage, it switches rapidly to an ON state (low resistance). The device stays in the ON state until the current through it falls below a specific holding current value.
Let's examine each option provided:
Based on the structural definition and operating principles, the Shockley diode is the correct answer as it is fundamentally a four-layer (P-N-P-N) semiconductor device.
Which of the following is the main application of Zener diode?
A diode for which you can change the reverse bias, and thus vary the capacitance is called a
A tunnel diode is
A ________ is a reverse biased silicon or germanium pn junction in which reverse current increase when the junction is exposed to light.
When the current through a Zener diode increases by a factor of 2, the voltage across its terminals