A tunnel diode, also known as an Esaki diode, is a special type of semiconductor device. Its key characteristic is the presence of a negative differential resistance region in its voltage-current (I-V) curve.
This negative resistance property means that as the voltage across the diode increases within a specific range, the current flowing through it actually decreases. This unusual behavior allows the diode to switch states extremely quickly.
The rapid transition exhibited due to negative differential resistance enables the tunnel diode to switch between its high-conductance state and low-conductance state in very short time intervals, often in the order of picoseconds. This makes it highly suitable for high-speed switching applications.
Considering its unique properties, the most prominent application for a tunnel diode is as a high-speed switch.