The metal gate that is insulated from the channel is also referred to as:
IGFET
IGFET: The Insulated Metal Gate Transistor
The question asks for the alternative name for a metal gate that is insulated from the channel in a transistor. Let's break down the concept and the options provided.
Understanding MOSFETs
A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a fundamental component in modern electronics, used extensively in digital circuits and amplifiers. Its operation relies on an electric field, controlled by a voltage applied to the gate terminal, to modulate the conductivity of a channel between the source and drain terminals.
The Insulated Gate Feature
A key characteristic of MOSFETs is that the gate terminal is electrically isolated from the semiconductor channel. This isolation is typically achieved using a thin layer of dielectric material, most commonly silicon dioxide ($SiO_2$). This insulating layer prevents current flow directly between the gate and the channel, allowing the gate voltage to control the channel's conductivity purely through electrostatic effects.
Defining IGFET
The term IGFET stands for Insulated-Gate Field-Effect Transistor. This name directly highlights the defining feature mentioned in the question: the presence of an insulating layer separating the gate electrode from the conducting channel.
Why IGFET is Correct
Since the defining structure of a MOSFET involves an insulated gate, the term IGFET is often used synonymously with MOSFET. It accurately describes the device where the gate is insulated from the channel. Therefore, a metal gate that is insulated from the channel is also referred to as an IGFET.
Analyzing Other Options
- Depletion MOSFET: This type of MOSFET can operate with both positive and negative gate voltages relative to the source. A channel exists even with zero gate bias.
- Complementary MOSFET (CMOS): This refers to a circuit configuration that uses both NMOS (N-channel) and PMOS (P-channel) transistors, known for low static power consumption.
- Enhancement MOSFET: This type of MOSFET requires a gate voltage (beyond a certain threshold voltage) to create or enhance a conducting channel between the source and drain.
In summary, the term that specifically describes a field-effect transistor with an insulated gate, like the one mentioned in the question, is IGFET.
Important Questions from Types of FET
A MOSFET differs from the JFET because
1. of the characteristics
2. the MOSFET has two gates
3. the JFET has p-n junctions
4. of the physical reduced size
Match the following :
List - I List - II (figure in the original question) (a) n-channel Enhancement (Normally off) (i) 
(b) p-channel Depletion MOSFET (Normally on) (ii) 
(c) n-channel FET (iii) 
(d) p-channel Enhancement MOSFET (iv) 
Codes :
The pull up to pull down ratio for an n mos inverter driven by another n mos inverter can be evaluated from:
(A) Vi nv = V t − \(\rm\frac{V_{t d}}{\sqrt{Zpu/Zpd}}\)
(B) V inv = \(\rm\frac{−V_{t d}}{\sqrt{Zpu/Zpd}}\)
(C) \(\rm\frac{W_{pd}}{L_{pd}}\) (V inv − V t) 2= \(\rm\frac{W_{p u}}{L_{p u}}\) (−V td )2
(D) \(\rm\frac{W_{p d}}{L_{p d}}\) (V inv − V t ) = \(\rm\frac{W_{p u}}{L_{pu}}\) (−V td )2
Choose the correct answer from the options given below:
Match List I with List II:
List I List II (A) JFET (I) Two dimensional electron gas (B) MOSFET (II) Negative resistance device (C) Tunnel diode (III) Enhancement mode (D) HEMT (IV) Voltage controlled resistor Choose the correct answer from the options given below:
Which of the following is NOT a minority carrier semiconductor device ?
